Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

N.A. Sobolev; A.M. Emel'yanov; Elena I. Shek; V.I. Vdovin

doi:10.4028/www.scientific.net/SSP.95-96.283

Paper Titles

Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors
p.249

Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)
p.255

Extended Defects in Silicon: an Old and New Story
p.263

Luminescence of Dislocations and Oxide Precipitates in Si
p.273

Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes
p.283

Luminescence of Silicon Implanted with Phosphorus
p.289

Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices
p.297

Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment
p.307

Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium
p.313

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Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

283-288

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.283

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Online since:

September 2003

Authors:

N.A. Sobolev, A.M. Emel'yanov, Elena I. Shek, V.I. Vdovin

Keywords:

Annealing, Electroluminescence, Extended Defects, Ion Implantation, Light Emitting Diode (LED), Quantum Efficiency, Single Crystal Silicon

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References

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