PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium

Barbara Surma; Andrzej Misiuk; Vito Raineri; A. Wnuk; J. Jagielski; A. Bukowski

doi:10.4028/www.scientific.net/SSP.99-100.255

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HomeSolid State PhenomenaSolid State Phenomena Vols. 99-100PL Studies of Nanostructured Layers in Temperature...

PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium

Abstract:

The effect of annealing under enhanced hydrostatic pressure (HT-HP treatment) on the structural evolution of nano-structured buried He-enriched layers in silicon was investigated by photoluminescence and TEM methods. It has been stated that the HT-HP treatment can affect the defect structure of nano-structured He-containing layer. Enhanced creation of helium bubbles during the HP-HT treatment takes place at HT £ 600oC. Annealing at HT ³ 800oC results in the accumulation (gettering) of oxygen atoms in the He implanted layer in Czochralski grown silicon. HP treatment stimulates this effect.

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Periodical:

Solid State Phenomena (Volumes 99-100)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.99-100.255

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Online since:

July 2004

Authors:

Barbara Surma, Andrzej Misiuk, Vito Raineri, A. Wnuk, J. Jagielski, A. Bukowski

Keywords:

Helium, Hydrostatic Pressure, Implantation, Nanodefects, Silicon

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