PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium

Abstract:

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The effect of annealing under enhanced hydrostatic pressure (HT-HP treatment) on the structural evolution of nano-structured buried He-enriched layers in silicon was investigated by photoluminescence and TEM methods. It has been stated that the HT-HP treatment can affect the defect structure of nano-structured He-containing layer. Enhanced creation of helium bubbles during the HP-HT treatment takes place at HT £ 600oC. Annealing at HT ³ 800oC results in the accumulation (gettering) of oxygen atoms in the He implanted layer in Czochralski grown silicon. HP treatment stimulates this effect.

Info:

Periodical:

Solid State Phenomena (Volumes 99-100)

Edited by:

Witold Lojkowski and John R. Blizzard

Pages:

255-258

DOI:

10.4028/www.scientific.net/SSP.99-100.255

Citation:

B. Surma et al., "PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium", Solid State Phenomena, Vols. 99-100, pp. 255-258, 2004

Online since:

July 2004

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Price:

$35.00

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