PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium
The effect of annealing under enhanced hydrostatic pressure (HT-HP treatment) on the structural evolution of nano-structured buried He-enriched layers in silicon was investigated by photoluminescence and TEM methods. It has been stated that the HT-HP treatment can affect the defect structure of nano-structured He-containing layer. Enhanced creation of helium bubbles during the HP-HT treatment takes place at HT £ 600oC. Annealing at HT ³ 800oC results in the accumulation (gettering) of oxygen atoms in the He implanted layer in Czochralski grown silicon. HP treatment stimulates this effect.
Witold Lojkowski and John R. Blizzard
B. Surma et al., "PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium", Solid State Phenomena, Vols. 99-100, pp. 255-258, 2004