Properties of TiO₂ Films Prepared by the Spray Pyrolysis Method

Abstract:

TiO2 thin films were prepared by spray pyrolysis method. The solution containing titanium(IV)isopropoxide, acetylacetone and ethanol was deposited onto n-type Si(100) and HD Si(100) wafers at substrate temperatures of 315 to 500 0C by pulsed spray solution feed. The films were characterized by FTIR, XRD, AFM, ellipsometry, impedance and I-V measurements. Asdeposited films prepared below 500 0C were amorphous, whereas crystalline films could be achieved at 500 0C. Subsequent annealing at 700 °C in air led to crystalline anatase formation for films deposited below 400 °C. Rutile phase appears in annealed films prepared at a growth temperature above 400 °C. Anatase TiO2 films show refractive index in the range 2.20 to 2.40 and exhibit a relative dielectric constant value of 75 in the range 1 to 100 kHz. Electric breakdown occurs for 120 nm thick film at 250 kV/cm.

• Periodical: Solid State Phenomena (Volumes 99-100)
• Pages: 259-264
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.99-100.259
• Online since: July 2004
• Authors: I. Oja, A. Mere, M. Krunks, C.-H. Solterbeck, M. Es-Souni
• Keywords: Electrical Properties, Spray Pyrolysis, Structure, Titania (TiO₂)

References

[1] L. Castaneda, J.C. Alonso, A. Ortiz, E. Andrade, J.M. Saniger, J.G. Banuelos: Mat. Chem. Phys. Vol. 9486 (2002), p.1.

[2] M. Okuya, N.A. Prokudina, K. Mushika, S. Kaneko: J. Europ. Ceram. Soc. Vol. 19 (1999), p.903.

[3] M.O. Abou-Helal, W.T. Seeber: App. Surf. Sci. Vol. 195 (2002), p.53.

[4] M.J. Alam, D.C. Cameron: J. Sol-Gel Sci. Techn. Vol. 25 (2002), p.137.

[5] Y. Djaoued, R. Taj, R. Brüning, S. Badilescu, P.V., Ashrit, G. Bader, T. Vo-Van: J. Non-Cryst. Solids Vol. 297 (2002), p.55.

DOI: 10.1016/s0022-3093(01)00918-8

[6] M. Burgos, M. Langlet: Thin Solid Films Vol. 349 (1999), p.19.

[7] O. Harizanov, A. Harizanova: Sol. Energy Mat. and Solar Cells Vol 63 (2000), p.185.

[8] B. Babuji, C. Balasubramanian, M. Radhakrishnan: J. Non-Cryst. Solids Vol. 55 (1983), p.405.

[9] H. Shin, M.R. De Guire, A.H. Heuer: J. App. Phys. Vol. 10, (1998), p.3311.