CdS-PbS Multilayer Thin Films Grown by the SILAR Method

Abstract:

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The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

Info:

Periodical:

Solid State Phenomena (Volumes 99-100)

Edited by:

Witold Lojkowski and John R. Blizzard

Pages:

243-246

DOI:

10.4028/www.scientific.net/SSP.99-100.243

Citation:

S. Lindroos et al., "CdS-PbS Multilayer Thin Films Grown by the SILAR Method", Solid State Phenomena, Vols. 99-100, pp. 243-246, 2004

Online since:

July 2004

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Price:

$35.00

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