Ion Implanted Nanolayers in AlN for Direct Bonding with Copper

J. Piekoszewski; Wieslawa Olesińska; J. Jagielski; D. Kaliński; M. Chmielewski; Z. Werner; M. Barlak; Wiesław Szymczyk

doi:10.4028/www.scientific.net/SSP.99-100.231

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Ion Implanted Nanolayers in AlN for Direct Bonding with Copper

Abstract:

Experiments to directly bond AlN with Cu were conducted for different pre-treatments of the bonded components. AlN substrates were implanted either with oxygen, or titanium or iron ions at low (15 keV) or high (70 keV) energy, or thermally oxidized. Some Ti-implanted samples were also thermally oxidized. The copper component was annealed and thermally oxidized. The best results, with respect to the bond shear strength, were obtained for low-energy implantation of oxygen and titanium.

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Periodical:

Solid State Phenomena (Volumes 99-100)

Pages:

231-234

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.99-100.231

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Online since:

July 2004

Authors:

J. Piekoszewski, Wieslawa Olesińska, J. Jagielski, D. Kaliński, M. Chmielewski, Z. Werner, M. Barlak, Wiesław Szymczyk

Keywords:

Aluminum Nitride (AlN), Direct Bonding, Ion Implantation, Nanolayer

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