Ion Implanted Nanolayers in AlN for Direct Bonding with Copper

Abstract:

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Experiments to directly bond AlN with Cu were conducted for different pre-treatments of the bonded components. AlN substrates were implanted either with oxygen, or titanium or iron ions at low (15 keV) or high (70 keV) energy, or thermally oxidized. Some Ti-implanted samples were also thermally oxidized. The copper component was annealed and thermally oxidized. The best results, with respect to the bond shear strength, were obtained for low-energy implantation of oxygen and titanium.

Info:

Periodical:

Solid State Phenomena (Volumes 99-100)

Edited by:

Witold Lojkowski and John R. Blizzard

Pages:

231-234

DOI:

10.4028/www.scientific.net/SSP.99-100.231

Citation:

J. Piekoszewski et al., "Ion Implanted Nanolayers in AlN for Direct Bonding with Copper", Solid State Phenomena, Vols. 99-100, pp. 231-234, 2004

Online since:

July 2004

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Price:

$35.00

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