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HomeSolid State PhenomenaSolid State Phenomena Vols. 99-100Fabrication of GaSb Microlenses by Photo and...

Fabrication of GaSb Microlenses by Photo and E-Beam Lithography and Dry Etching

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Abstract:

Fabrication of surface-relief microstructures in GaSb for application in mid-infrared optoelectronic devices is described. Photo- and e-beam lithography was used to define patterns on GaSb surfaces. Ar/O2 sputter etching and RIE in BCl3-based plasma were applied to transfer preshaped master into the GaSb substrate. Circular microlenses with an aspect ratio (height to diameter) 0.4/10 µm and circular gratings with 0.4 µm linewidth / 1 µm period and 1.7 µm depth have been demonstrated.

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Functional Nanomaterials for Optoelectronics and other Applications

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Periodical:

Solid State Phenomena (Volumes 99-100)

Pages:

83-88

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.99-100.83

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Cite this paper

Online since:

July 2004

Authors:

E. Papis, Anna Piotrowska, T.T. Piotrowski, K. Gołaszewska, L. Ilka, R. Kruszka, Jacek Ratajczak, J. Kątcki, J. Wróbel, M. Aleszkiewicz, R. Łukaskiewicz

Keywords:

GaSb, Micro-Lens, Reactive Ion Etching, Sputter Etching

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[4] 0 GaSb in BCl3 plasma P = 30 W p = 60 µbar T = 60 oC Depth of etching (nm) Time of etching (min. ) 0 10 20 30 40 50 60.

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[1] 6 Power (W) Depth of etching (nm) GaSb in BCl3 plasma Ar/(BCl3+Ar) = 0. 35 p = 60 µbar T = 60 oC t = 2 min.

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[3] 0 Depth of etching (nm) GaSb in BCl3 plasma P = 30 W p = 60 µbar T = 60 oC t = 2 min. Gas flow ratio Ar/(BCl3+Ar) 50 µm 5 µm a) b) c) Fig. 6. SEM micrographs of GaSb circular grating fabricated by e-beam lithography and RIE in BCl3 - based plasma. Magnitude of a) 350x, b) 3500x.

DOI: 10.1016/s0038-1101(99)00303-2