Semiconducting Nanowires: Properties and Architectures

Abstract:

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The paper describes the use of an in-situ microscopy technique, which combines transmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of individual silicon and germanium nanowires. Additionally, the formation of ordered arrays of size-monodisperse silicon and germanium nanowires within mesoporous silica powders and thin films using a supercritical fluid inclusion phase technique is described. In particular, we demonstrate ultra high-density arrays of germanium nanowires, up to 2 x 1012 wires per square centimetre. These matric embedded nano-composite materials display unique optical properties such as intense room temperature ultraviolet and visible photoluminescence.

Info:

Periodical:

Solid State Phenomena (Volumes 99-100)

Edited by:

Witold Lojkowski and John R. Blizzard

Pages:

109-116

DOI:

10.4028/www.scientific.net/SSP.99-100.109

Citation:

D. Erts et al., "Semiconducting Nanowires: Properties and Architectures", Solid State Phenomena, Vols. 99-100, pp. 109-116, 2004

Online since:

July 2004

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Price:

$35.00

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