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Choe, Synthesis and characterization of ZnS: Cu, Al phosphor prepared by a chemical solution method,  Journal of luminescence 104, no. 4 (2003) 261-266
Agawane et al., Green route fast synthesis and characterization of chemical bath deposited nanocrystalline ZnS buffer layers, Current Applied Physics 13 (2013) 850-856
[11] El-Desoky, M.M., G.A.
El-Barbary, D.
El Refaey, and Farid El-Tantawy, Optical constants and dispersion parameters of La-doped ZnS nanocrystalline films prepared by sol–gel technique, Optik 168 (2018) 764-777.

In the elastic range of deformation, most FCC metals (except Al) exhibit strong elastic anisotropy.
The lattice strains in the longitudinal direction, el//,hklε , are proportional to the applied macro-stress, σM: hkl M el //,hkl E σ ε =
The transverse strains, el,hkl ⊥ε , for an isotropic elastic solid subjected to uniaxial loading are represented by M hkl hkl el ,hkl E σ ν ε       −=⊥
Following the approach of Gnäupel-Herold et al. [11], we solved the reciprocal problem in determining the best values for single-crystal elastic constants, which fit the experimentally determined data in the frame of Kröner model.

In the research conducted by Barros and Silva (2003) and followed by Barros et al. (2007).
El-eraky, S.A.
El Awdan, Egypt J.
El-feky, Z.K.A.
El-samii, N.A.

Al-Ghamdi, O.
El Okr, A.
El-Gazzar, F.
El-Tantawy, F.
El Hichou, N.

After temper-rolling, YP-El of all of the sheets decreased.
After aging, YP-El of steel C22 and C45 reappeared.
Takeda et.al. 5) reported that ky of extra low carbon steels water-cooled from annealing temperature were from 100 MPa・μm-1/2 to 600 MPa・μm-1/2.
Funakawa et.al. 7) reported that ky reached maximum 600 MPa・μm-1/2 in the air-cooled steel sheet after annealing with the solute carbon of 13ppm.
Steel C16 had enough solute carbon to make Cottrell atmosphere, but YP-El did not reappear.

For comparative analysis of selected two natural seismic record analysis and calculation: the 1940 famous El Centro 270 Deg, record time 30s, 1952 Taft of Lincoln School, 69 Deg record.
Analytical procedures, mode superposition transient structural analysis.Three load cases are: TH1, X to enter the El Centro wave; TH2, X-directional input Taft wave; TH3, X to the input X to enter El Centro wave Y to enter the Taft wave.
Two seismic waves, the El Centro wave structure seismic reaction force large than Taft wave.
Harbin: Harbin Engineering University , 2007 In Chinese [2] Xia Zhufeng, Wang Mingdan, Huang Xiaolin, et al.
CNP1000 containment earthquake resistance analysis.Nuclear Techniques,2010,33(2):138-142 In Chinese [5] Shi Yanfeng, Wei Hong, Xu Donghan,et al.

El Centro wave (Fig. 4) is used as horizontal seismic excitation propagating vertically from the bedrock.
The response spectrum of El Centro wave is shown in Fig. 5.
Li, et al, Rock and Soil Mechanics, Vol.22 2 (2001) 138
Qin, et al, China Civil Engineering Journal, Vol.36 12 (2003) 74
Tsai, et al, A computer program for approximate 3-D analysis of soil-structure interaction problems, EERC 75-30, Earthquake Engineering Research Center, University of California, Berkeley, 1975.

Compliance at the GaSb/GaP interface by Misfit Dislocations array El Kazzi Salim1,a, Desplanque Ludovic1,b, Coinon Christophe1, Wang Yi2, Ruterana Pierrre2 and Wallart Xavier1 1Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, B.P. 60069, 59652 Villeneuve d’Ascq, France 2Centre de Recherche sur les Ions, les Matériaux et la Photonique, 6 boulevard du Maréchal Juin, 14050 Caen cedex 4, France asalim.el-kazzi@ed.univ-lille1.fr, bludovic.desplanque@iemn.univ-lille1.fr Keywords: Antimonides, Molecular Beam Epitaxy, Gallium Phosphide, Misfit dislocations Abstract: We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate.
Since the initial works of Chang et al. [3], AlSb/InAs heterostructures exhibiting electron mobility higher than 30 000 cm2.V-1.s-1 have been demonstrated on mismatched GaAs or InP substrates using a GaSb or an AlSb metamorphic buffer layer [2, 4-5].
Even if these values are lower than the best ones reported on GaAs or InP [4-5], they are similar to the ones reported by Lin et al. [14] using a ten times thicker buffer layer for a similar system.

For instance, Storasta et al. assume a pseudodonor character of the the D1 defect, that is associated with a hole trap at 0.34 eV above the valence band [28].
Furthermore, Kimoto et al. [24] suggested that the known defect EH6/7 (EC-1.55 eV) couldFig. 4: Recorded spectra of electroluminescence measurements from a pulsed MOSFET test structure at cryogenic and room temperature and the spectrum of a different SiC diode biased in forward direction at room temperature.
Photon emission around 1.8 eV has also been reported in earlier work [21, 23, 29] measuring thermal stimulated luminescence (TSL) and photoluminescence attributing it to aluminum (Al) as a hole trap or the PbC center.
Different luminescence measurements methods (L) such as photoluminescence (PL), photoexcitation (PE), thermally stimulated luminescence (TSL), thermoluminescence (TL), electroluminescence (EL), chathodoluminescence (CL) and photo stimulated tunneling (PST) are used.
Peak [eV] L Source Classification 1.82 PL [29] O-band / O-defect 1.8 PE [31] PbC -/0 1.8 TSL [23] Al as hole trap 1.77 TL [21] related to Al or B and following recombination 2.554 EL [17] defect electroluminescence (DEL) via N and the i-center 2.583 EL [18] fast processes of trap filling and free-carrier recombination 2.455 EL [19] EK2 donor - D acceptor transition 2.455 PL [16] DAP transition 2.6 EL [32] radiative recombination involving the HK1 deep center 2.557 EL [20] recombination via Z1/2 (EC-0.63eV) 2.583 CL [22] DAP (N and Al/B) or recombination via Z1/2 2.750 CL [27] oxygen related emission 2.77 PST [1] intrinsic SiO2 defect 2.9 PL [14],[...]

((Yeh, Lee, et Hsu 2011) [7], (Abdullah et al. 2020) [8], (Zhang et al. 2014) [9], (Ouhamdouch et al. 2019). [10] Ghis-Nekor plain is increasingly impacted by pollution due to untreated liquid discharges (urban and industrial) and uncontrolled landfills.
Taoufiq et al. 2023) [15].
Taoufiq et al. 2023) [15] .
El-Gamal, K.
El Mabrouki.