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Online since: June 2012
Authors: Rui Lin Zhang, Zhu Hua Hu, Wei Jie Guo, Hui Min Liu
Introduction Image de nosing is a key step in image processing, noise reduction is used as the pre-processing stage for segmentation, image analysis and interpretation.
Also, wavelet thresholding is a method which has been reported in several studies for noise reduction[1,2].
Through analyzing the experimental data and results, the proposed method preserves the image details and edges while effectively removing noise in the cameraman images.
Online since: June 2014
Authors: Saksorn Limwichean, Pitak Eiamchai, Chanunthorn Chananonnawathorn, Mati Horprathum, Pongpan Chindaudom, Kamon Aiempanakit, Thanat Srichaiyaperk
The results of the film thickness, in comparison with those from SEM, were shown in Fig.2(b) The corresponding data between two techniques indicated that the physical and optical SE models were sufficiently accurate to analyze the WO3 thin films.
As the annealing was increased, thin film annealing treatment at 200oC has spectral transmittance increase due to film has higher transparency, while film annealing treatment at 300-400°C show the reduction in transmittance.
Finally, the optical transmittance spectra show the reduction in the transmittance because of the increased grain size and the oxygen deficiency at the higher substrate temperatures. 5.
Online since: August 2017
Authors: Suppachai Sinthaworn, Nopagon Usahanunth, Waranon Kongsong, Seree Tuprakay, Sirawan Ruangchuay Tuprakay, Sathian Charoenrien
This paper focuses on industrial thermosetting plastic waste reduction by recycling as the material for natural coarse aggregate replacement in concrete.
The data obtained from sample test according to BS standard.
[9] Farzana, R. and Sahajwalla, V.,.Novel Recycling to Transform Automotive Waste Glass and Plastics into SiC-Bearing Resource by Silica Reduction.
[11] BUILDING CONTROL ACT, B.E. 2522, Department of Public Works and Town and Country Planning, Ministry of Interior. http://www.dpt.go.th/wan/lawdpt/data /02/581030_01.pdf, (accessed 16.12.02),2016
Online since: July 2014
Authors: Jiang Ping Zeng, Shao Hua Zhou, Qi Xiong
Based on some experiment data, a numerical method is used to get an equation about forbidden band Eg via the variety composition of Ge at 300K using MATLAB, which is more precise than linearization.
Through the extraction of the result of the experiment data, we use mathematical methods of interpolation method and fitting method to achieve two better expressions than linear ones.
We take advantage of the two groups of data of conduction band and valence band concentration ratio of SiGe and Si presented in the literature.
SiGe forbidden band width and ΔEGeff calculation mathematical model The materials forbidden band width must be a precise parameter number in heterojunction devices, for the forbidden band width of Si here with the ready-made data is 1.17eV [5].
[3]Zelilca,Matutinovic - Krsteli ,Venkataraman ,et a1.Base Resistance and Effective Band Gap Reduction in n-p-n Si/S i1-xGex/Si HBT’s with Heavy Base Doping[J].IEEE Transactions Electron Device,1996,43 (3 ) :457~465
Online since: December 2013
Authors: Sergey Panin, Т. Маndoung, Ludmila Kornienko, М.A. Poltaranin, L.R. Ivanova
One can also see data on changing friction coefficient at filling UHMWPE by the PP powder.
Thus, in spite of double reduction of ultimate strength and almost four-times diminishing of the elongation at failure its wear resistance is twice higher in contrast with one of pure UHMWPE.
Data on the degree of crystallinity (χ) for all investigated compositions are presented in Tables 1 and 2.
It is seen that adding the nano-fillers gives rise to reduction of the ultimate strength of composites based on this mixture.
It is seen that the value of roughness for the composites with different types of nanofillers clearly correlates with the wear intensity data.
Online since: October 2010
Authors: Vincenzo Antonucci, Antonino Salvatore Arico’, Giuseppe Monforte, Alessandro Stassi, Massimiliano Lo Faro, Maurizio Minutoli, Vincenza Modafferi, Pierluigi Antonucci
The thermal reduction at 800 °C caused the occurrence of metallic Ni on the surface.
Therefore, the choice of liquid fuels is strategic to achieve high energy density as well as allows a reduction of the size, complexity, and cost of the system [9-11].
In this study we report the electrochemical data for the direct oxidation process of pure methanol (99.99%) in an SOFC based on a Ni-modified La0.6Sr0.4Fe0.8Co0.2O3 (LSFCO) anode catalyst in the presence of ceria-based electrolytes.
To characterize the surface of the activated catalyst using isotherm data, we considered the general mechanism of adsorption.
In fact, by comparing data of selectivities obtained in the various conditions, it can be noted that the presence of oxygen in the reaction stream contributes to the slightly decrease of selectivity to hydrogen (table 1).
Online since: June 2019
Authors: Isaias Ramirez-Vazquez, Miguel Ramirez-Gonzalez, J. Eduardo Salgado-Talavera
The results of this research end up in an improvement factor of up to 100 times the reduction in resistivity, when graphene nano particles are used.
The main network inputs for each NARX model comprises the following experimental test data: humidity, resistivity and current impulse.
Since the available data set for training was relatively small, Bayesian regularization technique was employed to ensure network generalization [20].
Additionally, an update of the NARX network parameters is always possible in case new data are available from experimental tests.
Conclusions Commercial chemical ground enhancers reformulated with grapene nano particles resulted with an improvement factor of up to 100 times of reduction in resistivity.
Online since: May 2016
Authors: A.E. Murphy, R.A.R. Young, Alton B. Horsfall, E.P. Ramsay, Ming Hung Weng, D.A. Smith, Muhammad I. Idris, H.K. Chan, D.T. Clark
Results and discussion The data in Fig. 1 show the normalized capacitance characteristics for the n-MOS and p-MOS capacitors.
The data in Fig. 3 show that when the applied positive gate voltage exceeds this value, the capacitance characteristics show a distinct frequency response.
The ID-VD characteristics of transistors fabricated using the thermally grown gate dielectrics are shown by the data in Fig. 5 and Fig. 6.
Because n-MOS devices are formed in a p- epilayer, the data in Fig. 5 shows n-MOS transistor characteristics measured on wafer C.
In pMOS, the carrier mobility was unchanged with the additional deposited layer, despite the degradation in the capacitance data.
Online since: August 2013
Authors: Gui Geng, Fu Qiang Song, Feng Shan Yang, Li Hua Yu, Tie Jun Wang, Zhi Pi, Chun Xue Peng, Yun Yang, Fei Sun, Zhi Wei Sun, Hui Jie Zhao
But there were no decreases of yield of root and sucrose of sugar beet in medium saline-alkali soil and reduction of yield of root and sucrose of sugar beet in heavy medium saline-alkali were faintly.
In case of further reduction of arable land resources, fuel ethanol from grains should not compete with agriculture food.
Results Yields and quality of sugar beet and maize in medium saline-alkali soil The difference of yields of sugar beet and maize may be evidenced from the data given in table 2 in medium saline-alkali soil.
Online since: September 2014
Authors: Zhi Qiang Wu, Jun Zhao, Lin Chen, Shu Zhong Wang, Hai Yu Meng, Zong Hu Lin
According to the “harmless, reduction and recycling” processing principle, landfill method, incineration and compost method were studied that secondary pollution and resource waste problems were unavoidable.
Advanced MSW separation and integrated utilization technology Based on the characteristics of Xi’an MSW, in accordance with the national principle “harmless, reduction and recycling”, the crusher, separation machine, and comprehensive utilization equipment were designed.
Published by China Statistics Press [2] Data were provided by Xi' an Solid Waste Administration [3] Yuwen N; Haijun Z; Su F; Xueping Z; Qing Z; Jiping C, Chemosphere 75(2009),p, 1879-1298 [4]Hasan Belevi and Hermann Moench: Environ Science and Technology 34(2000),p. 2501-2506 [5]Yuan H, Wang L, Su F, Hu G.
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