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The Sorption of N2 over Hardened Cement Paste was used to characterize the surface area, pore structure of HCP.
Pore structure and surface area of HCP is believed as a decisive factor determining properties, N2 adsorption and is the widely-applied techniques capable of characterizing the surface area and pore structure.
The Sorption of CO2 over Hardened Cement Paste was used to characterize the surface area, pore structure and the acid-base characteristic of HCP.
Taylor, The chemistry of cements, Academic Press: London and New York, 1964; Volume1, Chapter 1

Mai2,d 1 Department of Chemistry, Huazhong University of Science and Technology, Wuhan 430074, China. 2 Center for Advanced Materials Technology (CAMT), School of Aerospace, Mechanical and Mechatronic Engineering, 107, The University of Sydney, Sydney, NSW 2006, Australia.
It has been testified that CNTs in superacids can self-assemble into extremely long strand-like structures and that this structure is just the basic component of the liquid crystalline phase [9].
Consequently, it's reasonable that AP-g-CNTs can exhibit liquid crystallinity in solution and molten states due to the chirality and the rodlike molecule structure of CNTs.
And AP-g-CNTs exhibit novel lyotropic and thermotropic liquid crystallinity with pattern-like crack texture in solution and molten states due to the chirality and rodlike molecule structure of CNTs.

When the content of Sr is 0.5%, there is formed body-centered cubic structure Al4Sr phase [8] not formed face-centered cubic structure Mg17Sr2 phase [9].
When the content of Sr is 3%, the primary α-Mg phase transforms Non-dendritic structure and there is no exist dendrite in Mg-6Zn-2Al-2Ca alloy.
It can be from Fig. 4 that the intergranular phases are semi-continuous bone-like structure.
Zhou: Inorganic Chemistry (Chemical Industry Press, Beijing 2009) [11] X.Q.

A Novel Method for the Synthesis of Manganese Oxide Nanostructures in a Microemulsion Hua Tian a, Junhui He b and Linlin Liu c Functional Nanomaterials Laboratory and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, China a tianhua@mail.ipc.ac.cn, b jhhe@mail.ipc.ac.cn, c chenmeng600@163.com Keywords: Manganese oxide, Birnessite, Microemulsion, Nanostructure.
Manganese oxides can be prepared in a wide variety of oxidation states and adopt different structures such as MnO2, Mn2O3, Mn3O4 and MnO.
Birnessite is a mixed oxide that combines Mn (IV) and Mn (III) cations with alkaline or alkaline-earth cations in a laminar structure of [MnO6] octahedra [5].
This is because when SDS/H2O = 16:84, BA > 1.0 wt%, the structure of microemulsion changes from rod to spherical [14].
In addition, in Fig. 1(d), the narrow diffraction peak positioned at 2θ = 26.2 o is indexed as the γ-MnOOH structure.

Introduction Over the years, one-dimensional (1D) nanomaterials, such as nanowires, nanorods or nanobelts, have attracted much attention in nanoscience research since they have unique chemical and physical properties and can be potentially applied in the field of catalysis, sensors, electrochemical energy storage devices and drug delivery.1-4 Magnetic nanomaterials, especially that of 1D structure, exhibit fascinating properties and have shown interesting applications in pigments, ferrofluids, microwave absorbing, magnetic recording, magnetic resonance imaging (MRI), drug delivery and bioseparation.5-9 Thus far, 1D iron oxide nanocrystal has been prepared by various methods.
Ding et al. have prepared magnetite nanorods via a one-step method of wet chemistry.10 Introducing a novel general theoretical concept called “purpose-built materials”, Hagfeldt et. al. have deposited Fe2O3 nanorod array on TiO2 mesoporous thin film.8 In Wang’s work, they have successfully prepared Fe3O4 nanowires applying a pulsed laser deposition (PLD) method and using Fe3O4 powder as a precursor.11 In this paper, Fe3O4 nanorod was synthesized through a facile one-step low temperature hydrothermal method, and for the first time we made a detailed study on the formation mechanisms of the Fe3O4 nanorod and their shifty magnetic properties during the reaction process. 2.
Low-magnification SEM images in Fig. 1(A) clearly show the sample possesses a large-scale uniform rod-like structure, which can also be demonstrated from TEM image of several Fe3O4 nanorods in Fig. 1(B).
Such rod-shaped structures are measured to be about 20 nm in width and 200~300 nm in length.
Thus, the transition from the fine amorphous shapes to nanorods took place, so as to synthesize the structure of perfect nanorods. 3.3.

Preparation of Mn-Fe Binary Oxide for Arsenic Removal from Aqueous Solution Mei Xue1,a, TingTing Liu1, Fei Cao1 1School of Chemistry and Chemical Engineering, Inner Mongolia University, 235 West University Road, Hohhot, 010021, China acasuna@yahoo.com.cn Keywords: Arsenic; adsorption; manganese; iron; drinking water Abstract.
Adsorbent Characterization: The crystal structure of the sample was investigated using a powder X-ray diffractometer (Rigaku type RINT2100) with CuKα (λ = 0.15418nm) radiation.
MF10/0 shows most small BET of 54 m2/g and MF0/10 with amorphous structure shows higher BET of 308 m2/g, indicating that Mn-Fe binary oxides crystallity decreases by Fe ion inserting into Mn site during the synthesis process.
MF10/0 shows plate like particle morphology, i.e. birnessite structure (Figure 3(a)) and MF0/10 shows many aggregated small particles morphology, i.e. amorphous structure (Figure 3(c)), which is identical with XRD results (Figure.2.).

ReRAM is expected to be one of the next generation non-volatile memories due to some advantage, such as simple device structure and high writing speed.
Very recently, we found that a low resistive Fe-O film (about 10-1 Ωcm) with a α-Fe2O3 structure can be obtained by precisely controlling oxygen gas flow rate during sputtering [4].
Experimental In this study, a simple structure (Metal/α-Fe2O3/Metal) memory device was prepared (Figure 1).
Fig. 1 Memory device structure.
Bulhões, Journal of Electroanalytical Chemistry, 452 (1998) 229-234

Firstly, patterned samples line (line structure etched on copper metal line) were observed in order to determine pitting corrosion and residues removal after cleaning.
Structure was analyzed by Infrared spectroscopy (FTIR).
We have focused our work on 0.14 µm / 0.14 µm line space structures.
The trenches are etched in a MERIE reactor with standard fluorocarbon based chemistry (C4F8/N2/Ar).
Compatibility of the SCCO2 cleaning process: Electrical measurments RC product was measured on 0.14 µm/0.14 µm serpentin/combs structures.

Huguenin-Love 3 1 Department of Chemistry, University of Nebraska at Kearney, 905 W 25th Street, Kearney, NE, 68849-1150 2 Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic 3 Department of Electrical Engineering, University of Nebraska-Lincoln,209 N WSEC, Lincoln, NE, 68588-0511 a email: olejn@fzu.cz Keywords: CuIn1-xBxSe2, CIBS, selenization, solar cells.
Problem is that if Ga substitution exceeds 30%, reductions in diffusion length due to alteration in the lattice crystal structure and changes in interface states between the CIGS and CdS or other window material leads to reduction in total efficiency of solar cell [1].
The structure of the films was studied by X-ray diffraction (XRD) using Cu K (l.5405 Ǻ) radiation, Raman spectroscopy and Auger electron spectroscopy (AES).
All these results corresponding with fact that no boron was included in final CIS structure.
Fig. 5a shows that after reaching 250°C (melting point of Se is 221°C) no changes in precursors structure was observed.

However, this does not prevent the appearance of many structural and morphological defects in the film. [1] The growth of SiC using the homogenous C precursor such as carbon tetrachloride (CBr4) could significantly change the chemistry of the gas phase during SiC growth, in a similar manner to that reported when using chlorosilanes or hydrogen chloride. [2]-[5] In previous work [3] we tested CBr4 as the only C precursor to grow SiC, i.e. the samples were grown using SiH4 and CBr4 only.
If a flow of CBr4 is added to the gas mixture used for sample A the crystalline structure of the SiC layer (sample B) shows some changes, as in figure 2, but the layer remains overall polycrystalline.
In this case the SAED pattern clearly shows an improvement in the lattice structure, which appears single crystalline.
This sample shows a columnar structure and even in this case the surface does not appear very flat (figure 5).
The SAD pattern shows again a polycrystalline structure, but the spots outside the silicon reflections are very strong, indicating that in this case the majority of SiC crystallites follow the (001) Si orientation.