The Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC Layers

Giovanni Attolini; Matteo Bosi; Bernard Enrico Watts; Gábor Battistig; László Dobos; Béla Pécz

doi:10.4028/www.scientific.net/MSF.711.22

Paper Titles

Progress in 3C-SiC Growth and Novel Applications
p.3

Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate
p.11

CVD Growth of 3C-SiC on 4H-SiC Substrate
p.16

The Influence of C₃H₈ and CBr₄ on Structural and Morphological Properties of 3C-SiC Layers
p.22

Structural Characterization of Heteroepitaxial 3C-SiC
p.27

Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
p.31

Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer
p.35

Study of 3C-SiC Mechanical Resonators, Filters and Mixers
p.43

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The Influence of C₃H₈ and CBr₄ on Structural and Morphological Properties of 3C-SiC Layers

Abstract:

In this work we report on the growth of cubic silicon carbide using CBr₄ and silane as precursors at different C₃H₈/CBr₄flow ratios. The layers were deposited on 2’’ (001) Si wafers by means of the VPE technique in a horizontal cold-wall reactor with induction heating. The growths were performed at atmospheric pressure, in H₂ atmosphere and involved several steps: Si thermal etching; carburisation; epitaxial growth. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were performed to observe the film morphology and defects and correlate them with the gas phase composition. Results show that the addition of CBr₄ to the standard SiH₄ and C₃H₈ precursor can change the crystalline nature and the morphology of the grown SiC.