Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer

Stéphane Berckmans; Laurent Auvray; Gabriel Ferro; François Cauwet; Véronique Soulière; Emmanuel Collard; Jean Baptiste Quoirin; Christian Brylinski

doi:10.4028/www.scientific.net/MSF.711.35

Paper Titles

CVD Growth of 3C-SiC on 4H-SiC Substrate
p.16

The Influence of C₃H₈ and CBr₄ on Structural and Morphological Properties of 3C-SiC Layers
p.22

Structural Characterization of Heteroepitaxial 3C-SiC
p.27

Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
p.31

Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer
p.35

Study of 3C-SiC Mechanical Resonators, Filters and Mixers
p.43

Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application
p.51

Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling
p.55

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
p.61

HomeMaterials Science ForumMaterials Science Forum Vol. 711Epitaxial Growth of 3C-SiC onto Silicon Substrate...

Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer

Abstract:

The crystal growth of 3C-SiC onto silicon substrate by Vapour-Liquid-Solid (VLS) transport has been investigated. In the studied growth configuration, propane feeds a SiGe liquid phase contained in 10 µm-deep etched trenches on the Si substrate. Before SiGe deposition, the substrate surface and the trench walls were coated with a thin (100 - 200 nm) CVD-grown 3C-SiC seeding layer. For the VLS growth, the temperature was increased up to 1280°C, above the SiGe alloy melting point, at which point propane was added to start VLS growth. X-ray diffraction shows that some SiC is grown epitaxially onto the CVD seeding layer. However, cross-section SEM observations have evidenced that SiC has grown as trapezoidal islands and not as an uniform layer. Backscattered electron images also clearly show a deep penetration of germanium into the substrate through the SiC seeding layer. This penetration was found to be strongly reduced when increasing the seeding layer thickness from 100 to 200 nm.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

35-39

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.35

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Online since:

January 2012

Authors:

Stéphane Berckmans, Laurent Auvray, Gabriel Ferro, François Cauwet, Véronique Soulière, Emmanuel Collard, Jean Baptiste Quoirin, Christian Brylinski

Keywords:

3C-SiC, SiGe, Silicon, VLS Transport

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