Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate

Jean Lorenzzi; Nikoletta Jegenyes; Mihai Lazar; Dominique Tournier; Davy Carole; François Cauwet; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.711.11

Paper Titles

Progress in 3C-SiC Growth and Novel Applications
p.3

Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate
p.11

CVD Growth of 3C-SiC on 4H-SiC Substrate
p.16

The Influence of C₃H₈ and CBr₄ on Structural and Morphological Properties of 3C-SiC Layers
p.22

Structural Characterization of Heteroepitaxial 3C-SiC
p.27

Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
p.31

Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer
p.35

Study of 3C-SiC Mechanical Resonators, Filters and Mixers
p.43

HomeMaterials Science ForumMaterials Science Forum Vol. 711Elimination of Twin Boundaries when Growing 3C-SiC...

Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate

Abstract:

In this work we report on the study of twin boundary (TB) evolution during heteroepitaxial growth of 3C-SiC on patterned 4H-SiC(0001) substrate by vapour-liquid-solid (VLS) mechanism. Ge₅₀Si₅₀melt was used at a temperature of 1450°C. 3C-SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed but it was systematically homoepitaxial. Elimination of TBs inside the 3C-SiC deposit on top of the mesas was observed for specific mesa shape and/or orientation of the sidewalls. Though three–fold or six-fold symmetry mesas are recommended for TB elimination, originally circular mesas lead also to the same result due to initial faceting toward hexagonal shape.

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Materials Science Forum (Volume 711)

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11-15

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.11

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Online since:

January 2012

Authors:

Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, François Cauwet, Gabriel Ferro

Keywords:

3C-SiC Heteroepitaxy, Patterned Substrate, Twin Boundary, VLS Growth

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References

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