Progress in 3C-SiC Growth and Novel Applications

Abstract:

Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Effect of different substrate surface preparations is considered. Typical extended defects and their electrical activity is discussed. Finally, possible novel applications are outlined.

• Periodical: Materials Science Forum (Volume 711)
• Pages: 3-10
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.711.3
• Online since: January 2012
• Authors: Rositza Yakimova, Remigijus Vasiliauskas, Jens Eriksson, Mikael Syväjärvi
• Keywords: Cubic Silicon Carbide (3C-SiC), Defect, Nucleation Control, Sublimation Growth, Supersaturation

References

[1] A. Schoner, M. Krieger, G. Pensl, M. Abe, H. Nagasawa, Fabrication and characterization of 3C-SiC-based MOSFETs, Chem. Vapor Deposition 12 (2006) 523-526.

DOI: 10.1002/cvde.200606467

[2] E. Okuno, T. Endo, J. Kawai, T. Sakakibara, S. Onda, (11–20) face channel MOSFET with low on-resistance, Mater. Sci. Forum 600–603 (2009) 1119-1122.

DOI: 10.4028/www.scientific.net/msf.600-603.1119

[3] T. Ohshima, K.K. Lee, Y. Ishida, K. Kojima, Y. Tanaka, T. Takahashi, M. Yoshikawa, H. Okumura, K. Arai, T. Kamiya, The electrical characteristics of metal-oxide- semiconductor field effect transistors fabricated on cubic silicon carbide, Jpn. J. Appl. Phys. 42 (2003) L625-627.

DOI: 10.1143/jjap.42.l625

[4] W.F. Knippenberg, Growth phenomena in silicon carbide, Philips Res. Repts. 1963, 18, 161-274.

[5] T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki, S. Ohshima, and S. Nishino, Supression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrates, Materials Science Forum 483-485 (2005)193-196.

DOI: 10.4028/www.scientific.net/msf.483-485.193

[6] A. Konnoa, Yu. Naritab, T. Itoa, K. Yasuic, H. Nakazawad, T. Endohe, and M. Suemitsua, Low-temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane, ECS Transactions 3 (2006) 449-455.

DOI: 10.1149/1.2357236

[7] M. Reyes, Y. Shishkin, S. Harvey, and S. E. Saddow, Development of a high growth rate 3C-SiC on Si CVD process, Mater. Res. Soc. Symp. Proc. 892 (2006) 79- 84.

DOI: 10.1557/proc-0911-b08-01

[8] M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz, Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates, J. Appl. Phys. 105 (2009) 083505 -9.

DOI: 10.1063/1.3089215

[9] H. Nagasawa, K. Yagi, T. Kawahara, 3C–SiC hetero-epitaxial growth on undulant Si(001) substrate, J. Cryst. Growth 237 (2002) 1244-9.

DOI: 10.1016/s0022-0248(01)02233-3

[10] H. Nagasawa, T. Kawahara, K. Yagi and N. Hatta, Propagation of stacking faults in 3C-SiC, Mater. Sci. Forum 679-680 (2011) 282-285.

DOI: 10.4028/www.scientific.net/msf.679-680.282

[11] Ph. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang, and M. Dudley, CVD Growth of 3C-SiC on 4H/6H Mesas, Chem. Vap. Deposition 12 (2006) 531–540.

DOI: 10.1002/cvde.200506460

[12] S. Leone, F.C. Beyer, A. Henry, O.Kordina, E. Janzén, Cloride-based CVD of 3C-SiC epitaxial layers on 6H (0001)SiC, Physica Status Solidi-Rapid Research Letters 4 (2010) 305-307.

DOI: 10.1002/pssr.201004271

[13] T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, Y. Takeda, Solution growth of high-quality 3C–SiC crystals, J. Cryst. Growth 310 (2008) 1438-1442.

DOI: 10.1016/j.jcrysgro.2007.11.210

[14] J. Eid, J.L. Santailler, B. Ferrand, A. Basset, A. Passero, R. Lewandowska, C. Balloud, J. Camassel, Improvement of cubic silicon carbide crystals grown from solution, Superlatt. Microstr. 40 (2006) 201-204.

DOI: 10.1016/j.spmi.2006.06.009

[15] T. Ujihara, K. Seki, R. Tanaka, S. Kozawa, K. Morimoto, K. Sasaki, Y. Takeda, High-quality and large-area 3C–SiC growth on 6H–SiC(0 001) seed crystal with top-seeded solution method, J. Crystal Growth (2010).

DOI: 10.1016/j.jcrysgro.2010.10.148

[16] M. Soueidan, G. Ferro, A vapor–liquid–solid mechanism for growing 3C-SiC single-domain layers on 6H–SiC(0001), Adv. Funct. Mater. 16 (2006) 975-979.

DOI: 10.1002/adfm.200500597

[17] M. Soueidan, G. Ferro, O. Kim-Hak, F. Cauwet, B. Nsouli, Vapor–liquid–solid growth of 3C-SiC on alpha-SiC substrates. 1. Growth mechanism, Cryst. Growth Des. 8 (2008) 1044-1050.

DOI: 10.1021/cg070499+

[18] O. Kim-Hak, G. Ferro, J. Dazord, M. Marinova, J. Lorenzzi, E. Polychroniadis, P. Chaudou¨ et, D. Chaussende, P. Miele, Study of the 3C–SiC nucleation from a liquid phase on a C face 6H–SiC substrate, J. Cryst. Growth 311 (2009) 2385-1388.

DOI: 10.1016/j.jcrysgro.2009.01.132

[19] D. Chaussende, L. Latu-Romain, L. Auvray, M. Ucar, M. Pons, R. Madar, Mater. Sci. Forum 483 (2005) 225-228.

DOI: 10.4028/www.scientific.net/msf.483-485.225

[20] M. Syväjärvi and R. Yakimova, Silicon carbide epitaxial layer and method of producing the same, Application number: PCT/EP2006/008130; US 11/990 335USA.

[21] M. Syväjärvi and R. Yakimova, Sublimation epitaxial growth of hexagonal and cubic SiC, in P. Bhattacharya, R. Fornari and H. Kamimura (Eds), Encyclopedia - The comprehensive Semiconductor Science & Technology (SEST), Elsevier, ISBN 978-0-444-53144-5, to be published (2011).

DOI: 10.1016/b978-0-44-453153-7.00092-4

[22] A. A. Lebedev and S. Yu. Davydov, A Vacancy Model of the Heteropolytype Epitaxy of SiC, Semiconductors 39 (2005) 277–280.

DOI: 10.1134/1.1882785

[23] R. Vasiliauskas, M. Marinova, M. Syväjärvi, A. Mantzari, A. Andreadou, J. Lorenzzi, G. Ferro, E.K. Polychroniadis, R. Yakimova, Sublimation growth and structural characterization of 3C-SiC on hexagonal and cubic SiC seeds, Mater. Sci. Forum 645-648 (2010) 175-178.

DOI: 10.4028/www.scientific.net/msf.645-648.175

[24] R. Yakimova, G. Reza Yazdi, Nut Sritirawisarn, and Mikael Syväjärvi, Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates, Mater. Sci. Forum 527-529 (2006) 283-286.

DOI: 10.4028/www.scientific.net/msf.527-529.283

[25] J. Kräußlich, A. Bauer, B. Wunderlich, K. Goetz, Lattice parameter measurements of 3C-SiC thin films grown on 6H-SiC(0001) substrate crystals, Mater. Sci. Forum 389-393 (2001) 319-322.

DOI: 10.4028/www.scientific.net/msf.353-356.319

[26] R. Vasiliauskas, M.Marinova , M.Syväjärvi, R.Liljedahl, G.Zoulis, J.Lorenzzi, G.Ferro, S. Juillaguet, J.Camassel, E.K. Polychroniadis, R.Yakimova Effect of initial substrate conditions on growth of cubic silicon carbide, J. Crystal Growth 324 (2011) 7-14.

DOI: 10.1016/j.jcrysgro.2011.03.024

[27] J. Eriksson, M.H. Weng, F. Roccaforte, F. Giannazzo, S. Leone, and V. Raineri, Appl. Phys. Lett. 95, (2009) 081907-1 - 081907-3.

DOI: 10.1063/1.3211965

[28] J. Eriksson, F. Roccaforte, S. Reshanov, S. Leone, F. Giannazzo, R. LoNigro, P. Fiorenza, and V. Raineri, Nanoscale characterization of electrical transport at metal/3C-SiC interfaces, Nanoscale Research Letters 6 (2011) 120-124.

DOI: 10.1186/1556-276x-6-120

[29] G. Cicero, A. Catellani, G. Galli, Atomic control of water interaction with biocompatible surfaces: the case of SiC(001), Phys. Rev. Lett., 93 (2004) 016102-05.

DOI: 10.1103/physrevlett.93.016102

[30] G. Beaucarne, A. S. Brown, M. J. Keevers, R. Corkish and M. A. Green, Semiconductors: an Opportunity for Very-High-Efficiency Solar Cells? Prog. Photovolt: Res. Appl. 10 (2002) 345–353.

DOI: 10.1002/pip.433