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The polishing reagent-aided and the organic base selected in advance, were mixed after being diluted with deionized water, respectively, subsequently, with different kinds of oxidants in different content added to the slurry.
Kang, J.Wang, Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate, Diamond & Abrasives Engineering, 2012, Vol.174, No.6 (2009) 20-23
Materials Science Forum,2004, Vols. 457-460: 805-808
Yao, et al., Study on chemical mechanical polishing parameters of 6H-SiC crystal substrate based on diamond abrasive, Advanced Material Research, Vol.797(2013) 261-265.

Comparison of Mechanical Properties of RE-7075 Al Alloy＇s Hot Rolled Sheet and Cold Rolled Sheet Jian-hua ZHONG1,a, Hong-bin ZHU1,b, Kai FENG1,c, Yin-ping XIAO1,d 1School Of Material Science and Engineering institute, Jiangxi University of Science and Technology, Ganzhou, Jiangxi, China 341000 azq8613@163.com,b2dong321@2008.sina.com,cfengkai02@126.com,dxyp063@126.com Keywords: two-step aging;RE;7075 Al alloy; sheet; mechanical properties Abstract.
In a word, Along with cold working advance, the softening annealing, the organizational structure nonuniform, the work-rate of alloy increasing which produce the phenomenon of material texture and present a large number of defects in alloy-materials.So they triggered the static reply and the static recrystallization.
(3) Along with cold working advance, the softening annealing, the organizational structure nonuniform and so on have initiated the static reply and the static recrystallization.
Materials Science Forum, 1996, 217-222: 1813- 1818
Materials Science Forum, 2007, 546- 549: 1171-1178

Mawby1,h 1University of Warwick, School of Engineering, Coventry, CV4 7AL, UK aH.Rong@warwick.ac.uk, bYogesh_Sharma@dynexsemi.com, cT.Dai@warwick.ac.uk, dF.Li.1@warwick.ac.uk, eM.R.Jennings@warwick.ac.uk, fS.Russell@warwick.ac.uk, gDavid.M.Martin@warwick.ac.uk, hP.A.Mawby@warwick.ac.uk Keywords: 4H-SiC MOSFET, (0001), High Temperature, Nitridation, MOS capacitor, Field effect mobility, Interface trap density Abstract.
Sharma, "Advanced SiO2/SiC Interface Passivation," Auburn University, 2012
Chow, "4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400oC," in Materials Science Forum, 2014, pp. 607-610
Materials Science Forum, 2013, pp. 599-602

Kanno Laboratory of Materials Design and Interface Engineering Department of Nanomechanics, Graduate School of Engineering Tohoku University, Sendai, 980-8578, Japan a watanabe@mdie.mech.tohoku.ac.jp, bturekawa@ mdie.mech.tohoku.ac.jp Keywords: Magnetic annealing, magnetic field, grain boundary microstructure, grain boundary engineering, grain growth, nanocrystalline materials, magnetic materials.
On the other hand, the importance and usefulness of the application of external fields such as magnetic, electric, ultrasonic stress fields, etc. during materials processing has been increasingly recognized for engineering of advanced materials [3].
Magnetic Annealing for Grain Boundary Engineering In the last two decades, the importance of "Grain Boundary Engineering" has been drawing an increasing interest of materials scientists, as a new approach to development of high performance structural and functional materials [12].
We have been deeply involved in basic studies of the grain boundary engineering based on magnetic annealing [1,3,4,10].
Forum, Vols.426-432,(2003), p.3819

Preface It is our pleasure to welcome all of you to attend the 2014 International Conference on Materials and Engineering Technology (MET2014) in Chicago, USA.
The MET2014 is a forum for presentation of new research results on Material Science, Communication and Information Technology, Mechatronics, Automation and Control Engineering, Power Electronics, Electrical Engineering, Embedded System, Data, Signal and Image Processing, Material and Technologies in Construction Industry and other related Engineering topics.
The rich program provided all participants to meet and discuss the advances and trends on the related areas.
The proceedings tended to collect the latest research results and applications on Material Science, Communication and Information Technology, Mechatronics, Automation and Control Engineering, Power Electronics, Electrical Engineering, Embedded System, Data, Signal and Image Processing, Material and Technologies in Construction Industry and other related Engineering topics.
Vânia Regina Salvini, São Carlos School of Engineering, University of São Paulo, Brazil Dr.

Paul Chow 1,c 1 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York, USA 12180 a lic6@rpi.edu, bbhati@rpi.edu, cchowt@rpi.edu Keywords: 4H-SiC, selective epitaxial growth, in-situ etching, chemical vapor deposition Abstract.
Acknowledgements: The work at RPI was supported by the Defense Advanced Research Projects Agency (DARPA) contract #DAAD19-02-1-026.
Forum 264- 268 (1998), p135
Forum 457-460 (2004), p185 [7] C.

[7] F.H Froes; J.J.Barbadillo; & C.Surynarayana, - Development, Technology Transfer, and Application of Advanced Aerospace Structural Materials. 1991, pp. 01-14
Forum. v.331-337 (2000) 1225-8
Materials Science Forum, v.416-418 (2003) 176-182
Ambrozio, Key Engineering Materials, Vols 189-191, 2001, pp 555-560

In spite of this fact, advanced SiC devices, such as GTOs and IGBTs have been reported [1,2], the commercial SiC power switch development is still confined to the basic framework of VJFET, MOSFET, and BJT devices because of the present state of processing technology [3-9].
Self-aligned techniques can also be employed to reduce the extrinsic base resistance in order to improve conduction and switching performance of power SiC BJTs; • Interface-related issues causing poor channel mobility in MOSFETs and short surface minority carrier lifetime in BJTs require serious surface engineering, which may involve using alternative gate and field dielectrics, the introduction of a stable surface charge, or other approaches; • Reduction of p-type ohmic contact resistance is important to improve switching performance of power SiC BJTs by reduction of the base resistance; • Development of an efficient and reliable edge termination and passivation techniques will allow for the thinner and higher doped voltage blocking regions which will further decrease both onstate and switching power losses; • The continued work toward integration of different types of devices on the same chip may finally lead to a fully integrated voltage controlled SiC switch.
Forum Vol. 389-393 (2002), p. 1185 [6] A.K.
Forum Vols. 433-436 (2003) p.769 [10] Y.

On stabilization of 3C-SiC using low off-axis 6H-SiC substrates Valdas Jokubavicius1, a*, Björn Lundqvist1,b, Philip Hens1,c, Rickard Liljedahl1,d, Rositza Yakimova1,e, Satoshi Kamiyama2,f and Mikael Syväjärvi1,g 1Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden 2Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan a*valjo@ifm.liu.se, bbjolu541@student.liu.se, cphihe@ifm.liu.se, dricli@ifm.liu.se, eroy@ifm.liu.se, fskami@ccmfs.meijo-u.ac.jp, gmisyv@ifm.liu.se Keywords: 3C-SiC, sublimation epitaxy, low off-axis 6H-SiC Abstract.
Introduction Cubic silicon carbide (3C-SiC) is an excellent candidate for fabrication of advanced metal–oxide–semiconductor field-effect transistors, micro-electro-mechanical systems or even to be used as a substrate for nitrides growth for various optoelectronic applications.
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Under the perspective of low carbon the New Energy Automobile Industry development and research based on collaborative innovation –A Case Study in Beijing -Tianjin- Hebei Area Sun Jie1, a, Hujiang Gong2, b and Wenfeng Liu1, c 1 School of Management, Tianjin University of Technology, Tianjin, China 2 Project Department, Tianjin Wuqing District Construction Engineering Company first construction company, Tianjin, China asyuan323@163.com, bgonghuijiang123@126.com, cliuwenfeng1990@126.com Keywords: new energy automotive industry, low-carbon economy, collaborative innovation.
Showing key enterprises the way, like great wall motor, how to accelerate the pace of research and development of new energy vehicles; supporting enterprise for developing and producing pure electric, plug-in hybrid electric vehicles and electric power modules, advanced batteries, motor and drive systems, electro-driven variable speed systems, hybrid electric car coupling and gear.
Based on collaborative innovation mechanism of industrial clusters innovation network [J] Chinese Science and Technology Forum, 2008 (7): 26-30
Government's new energy vehicle development incentive regulation [J] Economic Forum, 2009 (1): 37-38