On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates

Valdas Jokubavicius; Björn Lundqvist; Philip Hens; Rickard Liljedahl; Rositza Yakimova; Satoshi  Kamiyama; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.717-720.193

Paper Titles

Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
p.177

Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
p.181

Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates
p.185

CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
p.189

On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates
p.193

Si_xC_y Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties
p.197

Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations
p.205

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
p.211

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies
p.217

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720On Stabilization of 3C-SiC Using Low Off-Axis...

On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates

Abstract:

Heteroepitaxial growth of 3C-SiC on 0.8 and 1.2 degree off-oriented 6H-SiC substrates was studied using a sublimation growth process. The 3C-SiC layers were grown at high growth rates with layer thickness up to 300 µm. The formation and the quality of 3C-SiC are influenced by the off-orientation of the substrate, the growth temperature (studied temperature range from 1750 °C to 1850°C), and the growth ambient (vacuum at 5*10^-5 mbar and nitrogen at 5*10^-1 mbar). The largest domains of 3C-SiC and the lowest number of double positioning boundaries were grown using nitrogen ambient and the highest growth temperature. The combined use of low off-axis substrate and high growth rate is a potential method to obtain material with bulk properties.