Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon

Philip Hens; Julian Müller; Günter Wagner; Rickard Liljedahl; Rositza Yakimova; Erdmann Spiecker; Peter J. Wellmann; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.717-720.177

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Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
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Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Freestanding 3C-SiC Grown by Sublimation Epitaxy...

Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon

Abstract:

In this work a new approach for the production of freestanding cubic silicon carbide (3C SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN).

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Materials Science Forum (Volumes 717-720)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.177

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Online since:

May 2012

Authors:

Philip Hens, Julian Müller, Günter Wagner, Rickard Liljedahl, Rositza Yakimova, Erdmann Spiecker, Peter J. Wellmann, Mikael Syväjärvi

Keywords:

Cubic Silicon Carbide (3C-SiC), Defect Reduction, Heteroepitaxy, Sublimation Growth

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References

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