The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers

Louise Lilja; Jawad Hassan; I.D. Booker; Peder Bergman; Erik Janzén

doi:10.4028/www.scientific.net/MSF.717-720.161

Paper Titles

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate
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Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
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Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
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Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
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The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers
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Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate
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Buried Selective Growth of p-Doped SiC by VLS Epitaxy
p.169

Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
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Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720The Effect of Growth Conditions on Carrier...

The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers

Abstract:

Carrier lifetime has been studied as a function of C/Si ratio and growth rate during epitaxial growth of n-type 4H-SiC using horizontal hot-wall CVD. Effort has been put on keeping all growth parameters constant with the exception of the parameter that is intended to vary. The carrier lifetime is found to decrease with increasing growth rate and the highest carrier lifetime is found for a C/Si ratio of 1. The surface roughness was correlated with epitaxial growth conditions with AFM analysis.

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Materials Science Forum (Volumes 717-720)

Pages:

161-164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.161

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Online since:

May 2012

Authors:

Louise Lilja, Jawad Hassan, I.D. Booker, Peder Bergman, Erik Janzén

Keywords:

Atomic Force Microscopy (AFM), Carrier Lifetime, Epitaxial Growth, Photoluminescence (PL)

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References

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