Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

Jawad Hassan; Louise Lilja; I.D. Booker; Peder Bergman; Erik Janzén

doi:10.4028/www.scientific.net/MSF.717-720.157

Paper Titles

Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle
p.141

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate
p.145

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
p.149

Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
p.153

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
p.157

The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers
p.161

Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate
p.165

Buried Selective Growth of p-Doped SiC by VLS Epitaxy
p.169

Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
p.173

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Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

Abstract:

In this report we present homoepitaxial growth of 4H-SiC on Si-face, nominally on-axis substrates with diameters up to 76 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers; local variations in carrier lifetime are different from standard epilayers on off-cut substrates. The properties of the layers were studied with focus on charge carrier lifetime and its correlation with starting growth conditions, inhomogeneities of surface morphology and different growth mechanisms.