Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

Kazutoshi Kojima; Satchiko Ito; Akiyo Nagata; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.717-720.141

Paper Titles

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
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Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
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Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications
p.133

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
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Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle
p.141

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate
p.145

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
p.149

Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
p.153

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Improvement of Homoepitaxial Layer Quality Grown...

Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

Abstract:

In this study, we struck a balance between specular surface morphology and polytype homogeneity on an epitaxial layer grown on 4H-SiC Si-face substrate with off angle less than 1degree by controlling the C/Si ratio with the SiH₄ flow rate. Schottky barrier diodes fabricated on a grown epitaxial layer exhibited a blocking of voltage over 1000 V and an n value of less than 1.1 with a high yield of more than 80%. A substrate with a low off angle was found to have an advantage as regareds the stress that generates the interfacial dislocations at the epitaxial layer/substrate interface during the epitaxial growth process.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

141-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.141

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Online since:

May 2012

Authors:

Kazutoshi Kojima, Satchiko Ito, Akiyo Nagata, Hajime Okumura

Keywords:

4H-SiC, C/Si Ratio, Dislocation, Epitaxy, Morpholoy, Off Angle, SiH₄, Stress, Vicinal

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