Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method

Hai Zheng Song; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.717-720.125

Paper Titles

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
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Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
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Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases
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In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
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Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
p.125

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
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Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications
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Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
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Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Investigation of Basal Plane Dislocation...

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method

Abstract:

An optimized molten KOH-NaOH eutectic etching method is developed to reveal defects in highly n-doped SiC substrates and to pre-treat the substrate prior to epitaxial growth. Different from the conventional KOH etching method, by way of eutectic method, the basal plane dislocation (BPD) conversion in the subsequent epitaxial growth is independent of the etch pit size pre-generated on the substrate. Even with a short period (~3 minutes) of pretreatment which does not generate any visible etch pits or degradation of surface morphology on the substrate, an epilayer with low BPD density -2 is still achieved. This simple and non-destructive method shows high potential to be practically employed as one of the basic pretreatment steps to the substrates in SiC epitaxial growth in order to achieve very low or free BPD density.

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Silicon Carbide and Related Materials 2011

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Materials Science Forum (Volumes 717-720)

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125-128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.125

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Online since:

May 2012

Authors:

Hai Zheng Song, Tangali S. Sudarshan

Keywords:

BPD Reduction/Elimination, Epitaxial Growth, Eutectic Etching, KOH-NaOH Eutectic Etching, Substrate Etching

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