Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

Milan Yazdanfar; Stefano Leone; Henrik Pedersen; Olof Kordina; Anne Henry; Erik Janzén

doi:10.4028/www.scientific.net/MSF.717-720.109

Paper Titles

High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC
p.93

Epitaxial Growth of 4H-SiС Using Si₂(CH₃)₆+Si₂Cl₆+C₃H₈+H₂ System by Atmospheric Pressure Hot CVD Method
p.97

4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)
p.101

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC
p.105

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
p.109

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
p.113

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases
p.117

In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
p.121

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
p.125

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Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

Abstract:

Epitaxial growth of 4H-SiC on 8º off-axis substrates has been performed under different condition during the temperature ramp up in order to study the effect on the carrot defect. The study was done in a hot wall chemical vapor deposition reactor using the single molecule precursor methyltrichlorosilane (MTS). During the temperature ramp up, a small flow of HCl or C2H4 was added to the H2 ambient to study different surface etching conditions. The best result was obtained when HCl was added from 1175 to 1520 °C during the ramp up to growth temperature (1575 °C).