Paper Title:
Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
  Abstract

Epitaxial growth of 4H-SiC on 8º off-axis substrates has been performed under different condition during the temperature ramp up in order to study the effect on the carrot defect. The study was done in a hot wall chemical vapor deposition reactor using the single molecule precursor methyltrichlorosilane (MTS). During the temperature ramp up, a small flow of HCl or C2H4 was added to the H2 ambient to study different surface etching conditions. The best result was obtained when HCl was added from 1175 to 1520 °C during the ramp up to growth temperature (1575 °C).

  Info
Periodical
Materials Science Forum (Volumes 717-720)
Chapter
Chapter 2: SiC Epitaxial Growth
Edited by
Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages
109-112
DOI
10.4028/www.scientific.net/MSF.717-720.109
Citation
M. Yazdanfar, S. Leone, H. Pedersen, O. Kordina, A. Henry, E. Janzén, "Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions", Materials Science Forum, Vols. 717-720, pp. 109-112, 2012
Online since
May 2012
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Price
$35.00
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