Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

Abstract:

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 105-108
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.105
• Online since: May 2012
• Authors: Wan Shun Zhao, Guo Sheng Sun, Hai Lei Wu, Guo Guo Yan, Liu Zheng, Lin Dong, Lei Wang, Xing Fang Liu, Li Jun Yang
• Keywords: 4H-SiC, Fast Epitaxial Growth, Low-Pressure Hot-Wall CVD

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