Growth and Light Properties of Fluorescent SiC for White LEDs

Mikael Syväjärvi; Rositza Yakimova; Motoaki Iwaya; Tetsuya Takeuchi; Isamu Akasaki; Satoshi  Kamiyama

doi:10.4028/www.scientific.net/MSF.717-720.87

Paper Titles

Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH₄ Flow
p.65

Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent
p.69

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
p.75

Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination
p.81

Growth and Light Properties of Fluorescent SiC for White LEDs
p.87

High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC
p.93

Epitaxial Growth of 4H-SiС Using Si₂(CH₃)₆+Si₂Cl₆+C₃H₈+H₂ System by Atmospheric Pressure Hot CVD Method
p.97

4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)
p.101

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC
p.105

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Growth and Light Properties of Fluorescent SiC for...

Growth and Light Properties of Fluorescent SiC for White LEDs

Abstract:

The LED technology started to developed many years ago with red light emitting diodes. To achieve the blue LED, novel growth technologies and process steps were explored, and made it possible to demonstrate efficient blue LED performance from nitrides. The efficiency was further developed and blue LEDs were commercially introduced in the 1990’s. The white LED became possible by the use of the blue LED and a phosphor that converts a part of the blue light to other colors in the visible range to combine into white light. However, even today there are limitations in the phosphor-based white LED technology, in particular for general lighting, and new solutions should be explored to speed the pace when white LEDs will be able to make substantial energy savings. In this paper we overview gallium nitride materials evolution and growth concepts for LEDs. We describe the fluorescent silicon carbide material prepared by a novel growth technology for a new type of white LED in general lighting with pure white light. This paper introduces an interesting research in fundamental growth and optical properties of light emitting silicon carbide.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

87-92

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.87

Citation:

Cite this paper

Online since:

May 2012

Authors:

Mikael Syväjärvi, Rositza Yakimova, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Satoshi Kamiyama

Keywords:

Fluorescent Semiconductor, Sublimation Epitaxy, White LED

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H.P. Maruska and J.J. Tietjen, Appl. Phys. Lett. 15 (1969) 317.

Google Scholar

[2] R. Dingle, K.L. Shaklee, R.F. Leheny and R.B. Zetterström, Appl. Phys. Lett 19 (1971) 5.

Google Scholar

[3] J.I. Pankove, E.A. Miller, D. Richman and J.E. Berkeyheiser, J. Luminescence 4 (1971) 63.

Google Scholar

[4] I. Akasaki and H. Amano, Jap. J. Appl. Phys. 45 (2006) 9001.

Google Scholar

[5] I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Cryst. Growth 98 (1989) 209.

Google Scholar

[6] H.J. Round, Electrical World 49 (1907) 309.

Google Scholar

[7] R.W. Brander, Proc. IEE 116 (1969) 329.

Google Scholar

[8] A. Suzuki, M. Ikeda, N. Nagao, H. Matsunami and T. Tanaka, J. Appl. Phys. 47 (1976) 4546.

Google Scholar

[9] W.v. Münch and W. Kürzinger, Solid State Electron. 21 (1978) 1129.

Google Scholar

[10] S. Nishino, A. Ibaraki, H. Matsunami, and T. Tanaka, Jpn. J. Appl. Phys. 19 (1980) L353.

Google Scholar

[11] L. Hoffman, G. Ziegler, D. Theis and C. Weyrich, J. Appl. Phys 53 (1982) 6962.

Google Scholar

[12] S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshuta, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I.G. Ivanov, J.P. Bergman, B. Monemar, T. Onuma and S.F. Chichibu, J. Appl. Phys. 99 (2006) 093108.

DOI: 10.1063/1.2195883

Google Scholar

[13] M. Syväjärvi and R. Yakimova: "Sublimation epitaxial growth of hexagonal and cubic SiC", Elsevier, chapter in encyclopedia - the Comprehensive Semiconductor Science & Technology (SEST), Pallab Bhattacharya, Roberto Fornari and Hiroshi Kamimura (Eds), ISBN 978-0-444-53144-5 (2011).

DOI: 10.1016/b978-0-44-453153-7.00092-4

Google Scholar