Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH4 Flow

Mamoru  Imade; Akito Ishikawa; Yusuke Nakagawa; Masashi  Yoshimura; Yasuo  Kitaoka; Takatomo Sasaki; Yusuke  Mori

doi:10.4028/www.scientific.net/MSF.717-720.65

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Growth of a Thick 2H-SiC Layer in Si-Li Solution...

Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH₄ Flow

Abstract:

The growth of thick 2H-SiC layers in Si-Li solution under a continuous CH₄ flow at atmospheric pressure was investigated. The thickness of the 2H-SiC layer increased linearly with the growth period, reaching as thick as 270-μm with a growth period of 7 hr. The Li concentration in the layers was as low as 1.0 × 10¹⁸ atoms/cm³, which was less than one-hundredth that observed in a previous study.

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Materials Science Forum (Volumes 717-720)

Pages:

65-68

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.65

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Online since:

May 2012

Authors:

Mamoru Imade, Akito Ishikawa, Yusuke Nakagawa, Masashi Yoshimura, Yasuo Kitaoka, Takatomo Sasaki, Yusuke Mori

Keywords:

2H-SiC, CH₄, Liquid-Phase Epitaxy, LPE, Si-Li

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