SiC Growth by Solvent-Laser Heated Floating Zone

Andrew A. Woodworth; Philip G. Neudeck; Ali Sayir; David J. Spry; Andrew J. Trunek; J. Anthony Powell

doi:10.4028/www.scientific.net/MSF.717-720.49

Paper Titles

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth
p.37

Bulk and Surface Effects on the Polytype Stability in SiC Crystals
p.41

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
p.45

SiC Growth by Solvent-Laser Heated Floating Zone
p.49

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
p.53

Control of Void Formation in 4H-SiC Solution Growth
p.57

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
p.61

Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH₄ Flow
p.65

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720SiC Growth by Solvent-Laser Heated Floating Zone

SiC Growth by Solvent-Laser Heated Floating Zone

Abstract:

In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes, source material, laser heating, and analysis of the first ever SiC crystals (confirmed by synchrotron white beam x-ray topography)