Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

Andrew J. Trunek; Philip G. Neudeck; Andrew A. Woodworth; J. Anthony Powell; David J. Spry; Balaji Raghothamachar; Michael Dudley

doi:10.4028/www.scientific.net/MSF.717-720.33

Paper Titles

Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
p.17

Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth
p.37

Bulk and Surface Effects on the Polytype Stability in SiC Crystals
p.41

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
p.45

SiC Growth by Solvent-Laser Heated Floating Zone
p.49

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Lateral Growth Expansion of 4H/6H-SiС M-Plane...

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

Abstract:

Lateral expansion of small mixed polytype 4H/6H-SiC and 6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented (11 ̅00) SiC boule slices containing regions of 4H and 6H-SiC or just single polytype 6H-SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 μm (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.

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Materials Science Forum (Volumes 717-720)

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33-36

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.33

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Online since:

May 2012

Authors:

Andrew J. Trunek, Philip G. Neudeck, Andrew A. Woodworth, J. Anthony Powell, David J. Spry, Balaji Raghothamachar, Michael Dudley

Keywords:

A-Face, a-Plane, CVD, Epitaxy, Hot Wall, M-Face, M-Plane

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References

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