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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Analysis of Growth Velocity of SiС Growth by the...

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method

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Abstract:

Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including compressible effect, convection and buoyancy effects, flow coupling between argon gas and species, and the Stefan effect. Calculation in 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that the origin of diffusion resistance reported so far was the effect of convection of argon gas and chemical species.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.25

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Online since:

May 2012

Authors:

Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin Ichi Nishizawa

Keywords:

Computer Simulation, Growth from Vapor, Heat Transfer, Substrate

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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