TSD Reduction by RAF (Repeated a-Face) Growth Method

Yasushi Urakami; Itaru Gunjishima; Satoshi Yamaguchi; Hiroyuki Kondo; Fusao Hirose; Ayumu Adachi; Shoichi Onda

doi:10.4028/www.scientific.net/MSF.717-720.9

Paper Titles

Status of Large Diameter SiC Single Crystals
p.3

Preface, Sponsors, Committes and Overview
p.5

TSD Reduction by RAF (Repeated a-Face) Growth Method
p.9

Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
p.13

Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
p.17

Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720TSD Reduction by RAF (Repeated a-Face) Growth...

TSD Reduction by RAF (Repeated a-Face) Growth Method

Abstract:

A reduction in threading screw dislocation (TSD) density in 4H-SiC (silicon carbide) crystal is required for SiC power devices. In this study, TSD’s transformation by the RAF (repeated a-face) growth method [1] is observed by transmission X-ray topography (g=0004) of the cross-section of the crystal. Increasing the number of repetitions of a-face growth and offsetting c-face growth to an angle of several degrees reduce TSDs. TSD density is reduced to 1.3 TSD/cm2. The RAF growth method is very effective towards growing high quality SiC crystals.