Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method

Emil Tymicki; Krzysztof Grasza; Katarzyna Racka; Tadeusz Łukasiewicz; Miroslaw Piersa; Kinga Kościewicz; Dominika Teklińska; Ryszard Diduszko; Paweł Skupiński; Rafał Jakieła; Jerzy Krupka

doi:10.4028/www.scientific.net/MSF.717-720.29

Paper Titles

Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
p.13

Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
p.17

Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth
p.37

Bulk and Surface Effects on the Polytype Stability in SiC Crystals
p.41

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
p.45

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Effect of Nitrogen Doping on the Growth of 4H...

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method

Abstract:

In this work results of nitrogen doping in the amount of 0 vol.%, 3 vol.% and 10 vol.% on the growth of the 4H polytype on the 6H-SiC seed are presented. SiC crystals grown by PVT method on the (000-1) C-face of 6H seeds using the open seed backside design have been investigated. Structural and electrical properties of the crystals were studied by different experimental methods.