Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter

Jong Hwi Park; Tae Kyoung Yang; Il Soo Kim; Won Jae Lee; Im Gyu Yeo; Tai Hee Eun; Seung Seok Lee; Jang Yul Kim; Myoung Chul Chun

doi:10.4028/www.scientific.net/MSF.717-720.17

Paper Titles

Status of Large Diameter SiC Single Crystals
p.3

Preface, Sponsors, Committes and Overview
p.5

TSD Reduction by RAF (Repeated a-Face) Growth Method
p.9

Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
p.13

Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
p.17

Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Process and Crucible Modification for Growth of...

Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter

Abstract:

The present research was focused to investigate various process parameters influenced on the large 4H-SiC crystal growth on a 6H-SiC seed by PVT method. The crucible diameter along horizontal axial direction and inserted graphite ring was modified to change the growth parameter like the temperature gradient. In the initial stage of growth, foreign polytypes such as 6H/4H were observed on 6H-SiC seed, indicating the growth temperature to be unstable on crystal surface. However, from the middle of growth step, 4H-SiC was successfully formed in the ingot with the modification of growth pressure and a SIMS analysis confirmed the high doping concentration in grown 4H-SiC crystal.

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Materials Science Forum (Volumes 717-720)

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17-20

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.17

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Online since:

May 2012

Authors:

Jong Hwi Park, Tae Kyoung Yang, Il Soo Kim, Won Jae Lee, Im Gyu Yeo, Tai Hee Eun, Seung Seok Lee, Jang Yul Kim, Myoung Chul Chun

Keywords:

4H-SiC, 6H-SiC, PVT, Transformation

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