Status of Large Diameter SiC Single Crystals
p.3
p.3
Preface, Sponsors, Committes and Overview
p.5
p.5
TSD Reduction by RAF (Repeated a-Face) Growth Method
p.9
p.9
Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
p.13
p.13
Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
p.17
p.17
Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21
p.21
Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25
p.25
Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29
p.29
Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33
p.33
Preface, Sponsors, Committes and Overview
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 717-720)
Pages:
5-5
Online since:
May 2012
Сopyright:
© 2012 Trans Tech Publications Ltd. All Rights Reserved
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