Status of Large Diameter SiC Single Crystals

Avinash K. Gupta; Ping Wu; Varatharajan Rengarajan; Xue Ping Xu; Murugesu Yoganathan; Christ Martin; Ejiro Emorhokpor; Andy Souzis; Ilya Zwieback; Tom Anderson

doi:10.4028/www.scientific.net/MSF.717-720.3

Paper Titles

Status of Large Diameter SiC Single Crystals
p.3

Preface, Sponsors, Committes and Overview
p.5

TSD Reduction by RAF (Repeated a-Face) Growth Method
p.9

Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
p.13

Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
p.17

Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Status of Large Diameter SiC Single Crystals

Status of Large Diameter SiC Single Crystals

Abstract:

Large-diameter SiC single crystals are grown at II-VI by the sublimation technique. 100mm substrates of semi-insulating 6H SiC and n-type 4H SiC are produced as commercial products; in development, diameter expansion to 125mm has been achieved. Over the last two years, significant improvements have been made in crystal quality. The values of FWHM of x-ray rocking curves are typically 20-40 arc-seconds for 6H SI wafers and 12-30 arc-seconds for 4H n+ wafers. Micropipe density is less than 3 cm-2, and less than 0.1 cm-2 in best substrates. Electrical resistivity of SI substrates is, typically, of 10¹¹ Ω•cm or above. For 4H n+ substrates, the typical dislocation density is about 9×10³ cm^-2 and the typical BPD density is less than 1×10³ cm^-2.

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Materials Science Forum (Volumes 717-720)

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3-8

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.3

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Online since:

May 2012

Authors:

Avinash K. Gupta, Ping Wu, Varatharajan Rengarajan, Xue Ping Xu, Murugesu Yoganathan, Christ Martin, Ejiro Emorhokpor, Andy Souzis, Ilya Zwieback, Tom Anderson

Keywords:

Bulk Crystal Growth, Crystal Defects, Dislocation, Polytype Conversion, Sublimation

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