Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals

Hiroshi Tsuge; Shinya Sato; Masakazu Katsuno; Tatsuo Fujimoto; Wataru Ohashi

doi:10.4028/www.scientific.net/MSF.717-720.13

Paper Titles

Status of Large Diameter SiC Single Crystals
p.3

Preface, Sponsors, Committes and Overview
p.5

TSD Reduction by RAF (Repeated a-Face) Growth Method
p.9

Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
p.13

Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
p.17

Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Growth of High Quality 4H-SiC Crystals in...

Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals

Abstract:

Large diameter 4H-SiC single crystal wafers with higher quality are required to improve the yields of devices fabricated onto the SiC wafers. For crystal growths with higher quality, it is important to prepare seed crystals with lower defect densities. In particular, the edge part of the seed has to be prepared with considerable care because the crystallinity of the enlarged part of grown crystals depends much upon the surface condition of the seed crystal during radial expansion growth. We found that growth with fewer defect and micropipe densities, specifically at the periphery of the crystal, is possible by utilizing in-situ etching process for the seed crystal surface. We have also performed intense numerical calculations of the temperature distribution around the seed surface, and discussed growth conditions which cause the in-situ etching effective to improvement of the crystallinity in enlarged crystals.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

13-16

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.13

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Online since:

May 2012

Authors:

Hiroshi Tsuge, Shinya Sato, Masakazu Katsuno, Tatsuo Fujimoto, Wataru Ohashi

Keywords:

4H-SiC, Defect, PVT Growth

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