Synthesis and Purification of Silicon Carbide Powders for Crystal Growth

Ta Ching Hsiao; Sheng Tsao

doi:10.4028/www.scientific.net/MSF.717-720.37

Paper Titles

Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
p.21

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
p.25

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth
p.37

Bulk and Surface Effects on the Polytype Stability in SiC Crystals
p.41

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
p.45

SiC Growth by Solvent-Laser Heated Floating Zone
p.49

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
p.53

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Synthesis and Purification of Silicon Carbide...

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth

Abstract:

Silicon carbide powders were prepared in a vacuum induction melting furnace (VIM). Silica and silicon were used as sources of silicon, and graphite powder was used a source of carbon. Pressures of 0.1 and 0.01 atm were selected as the operation conditions, and different silicon carbide powders were prepared. Free carbon and remnant silica were removed by high-temperature baking in air and acid leaching. Low-pressure powders show better crystallinity; moreover, free carbon and silica were rarely found in the product after baking and leaching. The low-pressure grains were prismatic whereas the high-pressure grains were porous. This shows that pressure is a critical parameter in silicon carbide formation, and low-pressure makes the low-temperature synthesis of silicon carbide feasible. Glow discharge mass spectra were used to analyze the impurity content in silicon carbide powders. After baking and leaching, the purity is increased from 3N5 (99.95 wt.%) to 4N5 (99.995 wt.%). Further purification procedures will be combined to meet the quality requirements for crystal growth.

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Silicon Carbide and Related Materials 2011

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Materials Science Forum (Volumes 717-720)

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37-40

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.37

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Online since:

May 2012

Authors:

Ta Ching Hsiao, Sheng Tsao

Keywords:

Crystal Growth, Purification, Silicon Carbide Powder, Synthesis

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