Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth

Yuji Yamamoto; Kazuaki Seki; Shigeta Kozawa; Alexander Alexander; Shunta Harada; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.717-720.53

Paper Titles

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth
p.37

Bulk and Surface Effects on the Polytype Stability in SiC Crystals
p.41

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
p.45

SiC Growth by Solvent-Laser Heated Floating Zone
p.49

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
p.53

Control of Void Formation in 4H-SiC Solution Growth
p.57

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
p.61

Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH₄ Flow
p.65

Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent
p.69

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Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth

Abstract:

We introduce a method to grow 4H-SiC single polytype stably by controlling the surface morphology. The polytype transition on on-axis 4H-SiC C-face was investigated from a viewpoint of surface morphology of grown layers. At the area where several hillock-like structures grew adjacently, the polytype transition from 4H-SiC to 6H-SiC or 15R-SiC often occurred. Therefore, we tried a modified seeded method to suppress the formation of hillock-like structures. As a result, the hillock-like structure on the grown layer was dramatically reduced. Moreover, the ratio of 4H-SiC polytype to the whole grown surface was increased to be almost 100%.