Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Julien Lefebure; Jean Marc Dedulle; Thierry Ouisse; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.717-720.69

Paper Titles

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
p.53

Control of Void Formation in 4H-SiC Solution Growth
p.57

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
p.61

Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH₄ Flow
p.65

Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent
p.69

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
p.75

Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination
p.81

Growth and Light Properties of Fluorescent SiC for White LEDs
p.87

High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC
p.93

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Growth Rate Prediction in SiC Solution Growth...

Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Abstract:

Besides the seeded sublimation process, which is the current industrial crystal growth process for silicon carbide (SiC), solution growth appears as a possible method for high quality bulk crystals. For a further development of the latter technique, a robust numerical model has been implemented with the aim to give quantitative outcomes in addition to qualitative information. Growth rates have been calculated for three different temperature ranges (1700, 1800 and 1900°C) in pure silicon. The computed values were found to be in good agreement with the experimental ones.