Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Jie Zhang; Gil Yong Chung; Edward Sanchez; Mark J. Loboda; Siddarth G. Sundaresan; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.717-720.137

Paper Titles

In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
p.121

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
p.125

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
p.129

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications
p.133

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
p.137

Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle
p.141

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate
p.145

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
p.149

Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
p.153

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Progress in Growth of Thick Epitaxial Layers on 4...

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Abstract:

This paper reports the progress of the thick epitaxy development at Dow Corning. Epiwafers with thickness of 50 – 100 m have been grown on 4° off-axis 76mm 4H SiC substrates. Smooth surface with RMS roughness below 1nm and defect density down to 2 cm-2 are achieved for 80 - 100 m thick epiwafers. Long carrier lifetime of 2 – 4 s are routinely obtained, and low BPD density in the range of 50 down to below 10 cm-2 is confirmed. High voltage JBS diodes have been successfully fabricated on these wafers with thick epitaxial layers.

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Materials Science Forum (Volumes 717-720)

Pages:

137-140

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.137

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Online since:

May 2012

Authors:

Jie Zhang, Gil Yong Chung, Edward Sanchez, Mark J. Loboda, Siddarth G. Sundaresan, Ranbir Singh

Keywords:

BPD Density, Carrier Lifetime, High Voltage Diode, Surface Defect, Thick Epitaxy

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