Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate

Nikoletta Jegenyes; Véronique Soulière; François Cauwet; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.717-720.145

Paper Titles

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
p.129

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications
p.133

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
p.137

Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle
p.141

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate
p.145

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
p.149

Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
p.153

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
p.157

The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers
p.161

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Surface Morphology Evolution after Epitaxial...

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate

Abstract:

Chemical vapour deposition in a cold wall reactor working at atmospheric pressure was used to study the homoeptaxial growth of 4H-SiC on 4°ff misoriented substrates from silane and propane precursors. The effect of various growth parameters (temperature 1450-1650°C, C/Si ratio 1-7, thickness 2.5-10 µm) were studied in order to determine the best conditions for obtaining smooth surfaces after epitaxy. It is shown that the main source of roughness is surface undulation which easily appears during growth, especially at low C/Si ratios and high temperature (up to 1600°C). Temperatures above 1600°C and C/Si ratio of 1 give the best results. When reducing temperature, a trade-off has to be found between defects formation and surface undulation.

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Materials Science Forum (Volumes 717-720)

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145-148

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https://doi.org/10.4028/www.scientific.net/MSF.717-720.145

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Online since:

May 2012

Authors:

Nikoletta Jegenyes, Véronique Soulière, François Cauwet, Gabriel Ferro

Keywords:

CVD, Step Bunching, Surface Morphology

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