Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method

Siva Prasad Kotamraju; Bharat Krishnan; Franziska Christine Beyer; Anne Henry; Olle Kordina; Erik Janzén; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.717-720.129

Paper Titles

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
p.113

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases
p.117

In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
p.121

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
p.125

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
p.129

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications
p.133

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
p.137

Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle
p.141

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate
p.145

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Electrical and Optical Properties of High-Purity...

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method

Abstract:

A reduced growth pressure (down to 10 Torr) was employed for the low-temperature chloro-carbon epitaxial growth. More than two times lower H₂ flow rate became possible. The optimal input H₂/Si and C/Si ratios were also lower. A significant reduction of the net free donor concentration resulted from the use of the low pressure, delivering partially compensated epilayers with the net free donor concentration below 7x10¹³ cm^-3. Deep levels were characterized in the low-temperature epilayers for the first time. No Z_1/2 or EH_6/7 centers could be detected by DLTS. No strong D₁ photoluminescence signature was observed. The high purity of the obtained epitaxial layers made it possible to use the low-temperature chloro-carbon epitaxial growth to fabricate drift regions of Schottky diodes for the first time. Promising values of the reverse breakdown voltage and the leakage current were obtained from the fabricated devices.

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Materials Science Forum (Volumes 717-720)

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129-132

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.129

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Online since:

May 2012

Authors:

Siva Prasad Kotamraju, Bharat Krishnan, Franziska Christine Beyer, Anne Henry, Olle Kordina, Erik Janzén, Yaroslav Koshka

Keywords:

Chloro-Carbon, DLTS, Epitaxial Growth, Photoluminescence (PL), Schottky

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