Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Davy Carole; Stéphane Berckmans; Arthur Vo-Ha; Mihai Lazar; Dominique Tournier; Pierre Brosselard; Véronique Soulière; Laurent Auvray; Gabriel Ferro; Christian Brylinski

doi:10.4028/www.scientific.net/MSF.717-720.169

Paper Titles

Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
p.153

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
p.157

The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers
p.161

Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate
p.165

Buried Selective Growth of p-Doped SiC by VLS Epitaxy
p.169

Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
p.173

Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
p.177

Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
p.181

Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates
p.185

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Buried Selective Growth of p-Doped SiC by VLS...

Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Abstract:

Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100°C. Patterns as large as 800 µm and as narrow as 10 µm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.