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Paper Titles
Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
p.149
Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
p.153
Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
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The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers
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Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate
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Buried Selective Growth of p-Doped SiC by VLS Epitaxy
p.169
Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
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Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
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Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
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Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate

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Abstract:

In this work we report on SiC epitaxial growth by vapour-liquid-solid (VLS) mechanism on on-axis 4H-SiC(0001) substrates which were previously patterned to form mesa structures. The liquid phase was set to Al70Si30. At 1100°C, it led to very high homoepitaxial lateral growth (140 µm/h) with pronounced spiral growth and in plane anisotropy of growth rate. Upon temperature increase to 1200 °C, this spiral growth was suppressed and the lateral growth was further increased up to 180 µm/h. The in-plane versus out-of-plane anisotropy of growth rate was found to be as high as 60 at this temperature and 46 at 1100°C.

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Silicon Carbide and Related Materials 2011 View Preview

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

165-168

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.165

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Online since:

May 2012

Authors:

Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, Gabriel Ferro

Keywords:

Aluminum (Al), Homoepitaxy, Lateral Enlargement, Patterned Substrate, p-Type Doping, VLS Growth

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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