Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

Hideki Shimizu; Takashi Watanabe

doi:10.4028/www.scientific.net/MSF.717-720.181

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Effect of Propane on Low Temperature Growth of...

Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

Abstract:

To demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C₃H₈ on the crystalline quality of the 3C-SiC films on Si (111) have been investigated by changing the flow rate of C₃H₈ at the substrate temperature of 950 °C. The crystalline quality has been investigated by transmission electron microscope and X-ray diffraction. 3C-SiC is epitaxially grown on Si(111) and the 3C-SiC films are in either near single crystalline or highly oriented form with stacking faults and twin. It is expected that the film with good crystalline quality may grow at around 2.5 in the ratio of the flow rate of C₃H₈ to SiH₄ and any microstructures of 3C-SiC films on Si (111) can be controlled by accurately controlling the ratio of C/Si.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.181

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Online since:

May 2012

Authors:

Hideki Shimizu, Takashi Watanabe

Keywords:

3C-SiC, Plasma-Assisted CVD, Si (111), Transmission Electron Microscope (TEM), X-Ray Diffraction (XRD)

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