CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

Xun Li; Stefano Leone; Sven Andersson; Olof Kordina; Anne Henry; Erik Janzén

doi:10.4028/www.scientific.net/MSF.717-720.189

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Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates
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CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC...

CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

Abstract:

This study has been focused on 3C-SiC epitaxial growth on 4H-SiC (0001) on-axis substrates using the standard CVD chemistry. Several growth parameters were investigated, including growth temperature, in-situ etching process and C/Si ratio. High quality single domain 3C epilayers could be obtained around 1350 °C, with propane present during pre-growth etching and when the C/Si ratio was equal to 1. The best grown layer is 100% 3C-SiC and single domain. The net n-type background doping is around 2x10¹⁶ cm^-3. The surface roughness of the layers from AFM analysis is in the 3 to 8 nm range on a 50x50 μm2 area.

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Materials Science Forum (Volumes 717-720)

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189-192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.189

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Online since:

May 2012

Authors:

Xun Li, Stefano Leone, Sven Andersson, Olof Kordina, Anne Henry, Erik Janzén

Keywords:

3C-SiC, CVD, Heteroepitaxial Growth

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