Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si &lt;111&gt; Substrates

Brian Wagner; James D. Oliver; Narsingh B. Singh; M. King; S. McLaughlin; D. Kahler; D. Knuteson; A. Berghmans; R. Rai

doi:10.4028/www.scientific.net/MSF.717-720.185

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Low Temperature Epitaxy of 3C SiC Using...

Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates

Abstract:

The CVD growth of SiC thin films using hexamethyldisilane (HMDS) as the singular precursor on Si substrates with an AlN nucleation layer was explored in this study. A statistically designed experiment was used to conclude that growth temperature has the largest impact on crystal quality and surface microstructure. In addition to crystal quality, wafer bow was studied. Crystal quality and growth rate are loosely correlated to wafer bow in our study. SEM surface microstructural analysis of the SiC films shows a changing microstructure with growth temperature consistent changes in measured crystal quality. TEM studies reveal that the films are the 3C polytype having a high density of planar faults.

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Materials Science Forum (Volumes 717-720)

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185-188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.185

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May 2012

Authors:

Brian Wagner, James D. Oliver, Narsingh B. Singh, M. King, S. McLaughlin, D. Kahler, D. Knuteson, A. Berghmans, R. Rai

Keywords:

CVD, Heteroepitaxy, HMDS, Silicon, TEM, X-Ray Diffraction (XRD)

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