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While under off-state conditions the EL often is indicative for an enhanced gate leakage current [2,3,7], the situation is more diverse in on-state.
EL image of an AlGaN/GaN HEMT after 750 h RF-stress (a) with ELI/Id and T profiles at Id » 26 mA for finger 4 (b) and 6 (c).
Gate finger 4 (GF4) shows a strong EL enhancement along its drain-side edge in comparison to the other GFs.
To compare the EL intensity (ELI) emitted from different GFs, vertically integrated EL line profiles parallel to the GFs were extracted.
However, the actual T distribution over all eight GFs is determined by the lateral heat spreading in the (Al)GaN/SiC system, i.e. we expect both, a lower T for GF4 and a higher T for the neighboring fingers [9].

Most of the hot stamped components from 22MnB5 blanks possess high strength-ductility with TS×El product from 10 to 15 GPa%.
Most of the hot stamped components from 22MnB5 blanks possess strength-ductility with TS×El product from 10 to 15 GPa%.
For 20s of P-T treatment at 400 oC, the higher strength-ductility is obtained with TS=1500MPa, El=17% and TS×El=25.5GPa%, as shown in Fig.4 [11].
Wang X.D selected a middle carbon steel with 0.485C, 1.195Mn, 1.185Si, 0.98Ni, 0.21Nb to carry out P-T treating at.400oC and obtained an ultra high strength-ductility with TS³2000MPa, El³10% and TS×El³20GPa%, as shown in Fig.5[12].
For conventional low alloyed TRIP assisted steels and the later developed Q-P steels, their chemical compositions are usually based on the original concept proposed by Matsumura et al in the range of 0.12–0.55C, 0.2–2.5 Mn, 0.4–1.8 Si (wt.%).

Some high damping alloys, have been already developed, such as Mn–Cu alloys [1, 2], Cu–Zn–Al alloys [3], Ni–Ti alloys [3, 4], Fe–Cr–Mn alloys [4,5], Fe–Al alloys [6, 7], and Mg alloys [8].
For the molding were used material of high purity (Fe: 99.99%, Mn: 99.95%, Si: 99.9 and Al: 99.99) and FeSi and FeMn master alloys.
The alloys proposed for obtain were: alloy1: Fe15Mn3Si (S1) (using for elaboration 139.4g Fe, 25.5g Mn and 5.1g Si), Fe15Mn3Si3Al (S3) (using for elaboration 150.1g Fe, 28.5g Mn, 5.7g Si and 5.7g Al) and Fe20Mn3Si3Al (S2) (using for elaboration 125.8g Fe, 34g Mn, 5.1g Si and 5.1g Al).
S3 el. list 1 80.40 76.71 15.16 14.71 2.37 4.51 2.06 4.07 - - Alloy S3 el. list 2 80.79 76.36 13.76 13.23 3.03 5.70 2.41 4.72 - - EDAX Error [%] 1 0.4 0.22 0.15 0.2 The EDAX detector error is small for all the elements, even for iron which is in a high percentage in the alloy, and can explain, at least partially, the chemical composition difference between the proposed alloy composition and the results obtained using EDS analyze technique.
Prashantha, Evaluation of shape memory effect and damping characteristics of Cu—Al—Be—Mn shape memory alloys, Perspectives in Science. 8 (2016) 244-246

EL-Sheikhy1*, A.
El-Sheikhy and A.
[4] Refat El-Sheikhy, Abdulaziz Alkuraif, Mosleh Al-Shamrani, “Converting polymer wastes to nanocomposites”, Vacuum, Vol. 217 (2023)
[13] El-Sheikhy, R.., Al-Shamrani M.
El-Sheikhy, N.

Fig. 2 PL spectra of copolymer in thin film under 390nm excitation Electroluminescent properties The EL performance of the copolymers was examined in the device configuration of ITO/PEDT/PVK/polymer/Ba/Al.
The typical EL spectra of copolymer from such device are shown in Fig. 3.
In order to evaluate the stability of the white light emission, EL spectra for copolymer PFO-DHTBT0.005 at various applied voltage, from 10.6 V to 15.6 V, are measured.
The external EL efficiencies in our standard device configuration ITO/PEDT/PVK/polymer/Ba/Al with PEDT intralayer vary with copolymer compositions.
Fig. 3 EL spectra of copolymer PFO-DHTBT with ITO/PEDT/PVK/polymer/Ba/Al structure Fig. 4 EL spectra of PFO-DHTBT0.005 on different current Table 2 Device performance of copolymers in Device configuration: ITO/PEDT/PFO-DHTBT/ Ba/Al polymer λElsmax /nm Bias (V) Current (mA) Light (cd/ m2) Cd/A QE (%) PFO-DHTBT0.001 516 8.6 5.30 249 0.70 1.04 PFO-DHTBT0.005 482 10.1 4.91 177 0.54 0.80 PFO-DHTBT0.01 602 7.7 5.45 235 0.65 1.13 PFO-DHTBT0.05 606 8.8 4.70 221 0.71 1.24 PFO-DHTBT0.1 614 11.6 5.03 395 1.18 2.06 PFO-DHTBT0.5 614 17.1 5.66 448 1.19 2.08 Conclusions We synthesized conjugated copolymers PFO-DHTBT, composed of random 9,9-dioctylfluorene and DHTBT, via a palladium-catalyzed Suzuki coupling reaction.

The smallest "steady" values EL = 4 - 5% were obtained in the case of ARB, and the maximum EL = 18% was obtained at MD.
The most favorable combination of strength and plasticity was obtained in copper after MD (UTS=460 MPa, EL ≅ 18%).
The best combination of the strength and plasticity of copper was achieved after MD (UTS= 450 MPa, EL ≅ 20%). 3.
Kopylov et al.: Processes of Plastic Structure Formation in Metals (Nauka i Tekhnika, Minsk, Belorus 1994) (in Russian)
[4] G.Salischev, R.Imaev, V.Imaev et al., in: Investigations and Applications of Severe Plastic deformation, edited by T.C.Lowe and R.Z.Valiev, NATO Science Series, 3.High TechnologyVol. 80, Kluwer Academic Publishers, Dordrecht, (2000)

For the EL analysis the devices have been tested at ISD=1 A, VDS= -3.1 V and VGS=-5 V.
On both device EL images are observed trapezoidal shaped stacking faults.
The amount of area covered by the SF in the region sampled by EL matches quite well to the Rdson drift.
Image a Image b EL conditions: ISD=1 A, VDS= -3.1 V, VGS=-5 V Rdson drift ~ 8.8% Rdson drift ~ 20% Area covered under EL: 10% Area covered under EL: 13.5% b.
Konishi et. al.

The multilayer organic light-emitting devices (OLEDs) ITO/NPB/Cl-TSB/BCP/TPBi or Alq3/LiF/Al were fabricated.
EL properties.
Fig. 5 EL spectra of the four devices at different voltages.
Their EL performances were summarized in Tab. 1.
b. λem: Center wavelength of the EL spectra.

El-Sehiemy1,b, M.
El-Sehiemy, and Sobhy M.
EL-Sehiemy, and Ahmed M.
‏ [12] El-Ela, AA Abou, et al.
El-Sehiemy, and Sobhy M.

Lee et al[5] and Cheng et al[6] reported several PO hosts with the structures of DPPO(diphenylphosphine oxide) -bonding carbazole derivatives, in which excellent current- voltage (I-V) characteristics and highly efficient deep-blue electrophosphorescence have been realized.
The excellent carrier injecting/ transporting ability of these hosts is one of the main factors directly affecting EL performances, including the driving voltage and efficiencies.
The array of 4 mm2 devices is completed by depositing 1 nm thick LiF and 200 nm thick Al through a shadow mask to define the cathodes.
Results and discussion Fig.2. depicted normalized EL spectra of all devices at the driving voltage of 8V.
Normalized EL spectra of B1, B2, B3 and B4 (b) (a) (d) (c) (d) (c) Fig.3.