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Nogriya et al have also observed the luminescence properties of CdSe/PVA composite film [4].
Mo et al have also found the zinc blend cubic structure of CdS in CdS/PVA composite film [12].
Smyntyna et al [29].
Fujita et al and Hyeok et al [32,33] have also reported the similar voltage-brightness characteristic for LDPE and MEH+PPV/ CdSe nanocomposite respectively.
Pier et al Electro-optic properties of CdS embedded in polymer: Physical Review B 48 (16) (1993) [3] S.

The multilayer organic light-emitting devices (OLEDs) ITO/NPB/Cl-TSB/BCP/TPBi or Alq3/LiF/Al were fabricated.
EL properties.
Fig. 5 EL spectra of the four devices at different voltages.
Their EL performances were summarized in Tab. 1.
b. λem: Center wavelength of the EL spectra.

Fig.1 Photo of seismic damage of museum cultural relics Many scholars have carried out studies on oscillation responses of free-standing objects under earthquakes.Zhang et al.[5-6] studied response of indoor free-standing equipment under the action of a foundation seesawing during an earthquake.They pointed out that the response included 3 types:periodic, quasi-periodic and chaotic,all of which were sensitive to the initial conditions.
Guo et al.[7] studied initial conditions for occurrence of oscillation and critical conditions for falling down of free-standing equipment under seismic excitation by theoretical analysis.
PGA=0.14g PGA=0.28g PGA=0.56g Fig.4 Acceleration curves of point 2 under white noise excitations PGA=0.14g PGA=0.28g PGA=0.56g Fig.5 Frequency distributions of showcase El-centro wave Taft wave Artificial wave Fig.6 Frequency distributions of earthquake waves (PGA=0.1g) Acceleration Response.
Table 2 Peak displacement values of relic (Unit:mm) PGA/g 0.1 0.2 0.4 El-centro 10.77 15.04 62.79 Taft 11.41 22.54 63.15 Artificial 20.08 38.18 61.25 Dynamic Magnification Factor.
By definition dynamic magnification factor for showcase is β1=a2/a1,for relic β2=a3/a1.Here a1,a2 and a3 represent peak acceleration values of showcase bottom,showcase top, and relic.Based on test data, β1 and β2 curves for different cases are plotted in Fig.9,where E represents El-centro wave,T represents Taft wave,and A represents Artificial wave.

While under off-state conditions the EL often is indicative for an enhanced gate leakage current [2,3,7], the situation is more diverse in on-state.
EL image of an AlGaN/GaN HEMT after 750 h RF-stress (a) with ELI/Id and T profiles at Id » 26 mA for finger 4 (b) and 6 (c).
Gate finger 4 (GF4) shows a strong EL enhancement along its drain-side edge in comparison to the other GFs.
To compare the EL intensity (ELI) emitted from different GFs, vertically integrated EL line profiles parallel to the GFs were extracted.
However, the actual T distribution over all eight GFs is determined by the lateral heat spreading in the (Al)GaN/SiC system, i.e. we expect both, a lower T for GF4 and a higher T for the neighboring fingers [9].

The elevation of horizontal layers above the water surface are EL.+5.850m, EL.+10.0m.
References [1] Xu Li，Liu Meiyan, Wang Yanfeng, et al.
[3] Ou Jinping et al.
[5] Eatherton M R, Hajjar J F,Deierlein G G, et al.
[8] Zhao Dong, Wang Weiqiang, Ma Nvjian, et al.

El-Sehiemy1,b, M.
El-Sehiemy, and Sobhy M.
EL-Sehiemy, and Ahmed M.
‏ [12] El-Ela, AA Abou, et al.
El-Sehiemy, and Sobhy M.

The activation energies of the process responsible for spreading/penetration are EL = 0.3±0.05 eV and ES = 0.5±0.1 eV for liquid and solid Ga, respectively.
The model reproduces the spreading/penetration rates that are observed, and gives reasonable estimates of the experimental activation energies ES and EL.
The activation energies of the spreading/penetra- tion process are EL= 0.3±0.05 eV (liquid Ga, line 1) and ES = 0.5±0.1 eV (solid Ga, line 2.
Tu et al. noted that the scallop morphology enables a high rate of wetting reaction, while the layer-type IC acts as diffusion barrier to dissolution [11].
Nix et al.

El-Sebaii et al [4] achieved the best performance of using gravel as porous matrix.
El-Sebaii et al. [4] recommended a mass flow rate of 0.05kgs-1 or lower, while Aldabbagh et al. [5] confirmed that the efficiency increases with increasing the mass flow rate for the range between 0.012-0.038kgs-1.
El-Sebaii, S.
El-Shebaii,H.
El-Sebaii, S.M.

Cutting Model in Machining of Al/SiCp Metal Matrix Composite S.
Ozben et al [1] studied the machinability of Al/SiC-p in turning operation which was produced by casting method by adding 5, 10 and 15 wt% of SiC-p.
El-Gallab, M.
El-Gallab, M., Sklad, “Machining of Al/SiC particulate metal-matrix composites.
El-Gallab, M.

It has been demonstrated that the technology of selective diffusion (using a graphite mask) of Al and B into SiC could be successfully used for fabrication of high voltage PIN diodes [3].
A photolithography process was employed to fabricate the mesa p-n diode structures with a diameter of 300 µm using Ti/Al/Ni for the p-contacts and Ni for the ncontacts.
This peak also appeared under forward bias for Al-doped epitaxial diode structures [5].
Ma for EL measurements.
EL spectra of the p+/n-/n+ and p+/p-/n+ diodes Fig.3.