Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations

Sara Kochoska; Martin Domeij; Thanh Toan Pham; Sotirios Maslougkas; Swapna Sunkari; Joshua Justice; Hrishikesh Das

doi:10.4028/p-52e297

Paper Titles

Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO₂-Interface Defects
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Comparison of the Performance-Degrading Near-Interface Traps in Commercial SiC MOSFETs
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SiC MOSFETs Biased C-V Curves: A Temperature Investigation
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Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation
p.37

Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
p.43

Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO₂/ SiN Gate Stack
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Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD
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Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs
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Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 1091Pulsed Forward Bias Body Diode Stress of 1200 v...

Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations

Abstract:

Bipolar degradation is a known problem in the development of SiC MOSFETs when the body diodes (p+ body/ n-drift layer) are forward biased. Mostly higher voltage classes like the 1.7 kV or 3.3 kV SiC MOSFETs have been studied in literature resulting with significant Rdson increase [1-2]. In this work, body diode stress was conducted for 1.2kV SiC MOSFETs, which were mapped with Infra-Red photoluminescence (IR-PL) to determine and localize the exact number of BPDs present in the drift layers of each die [3, 4] and grouped by this criterion. Devices were stressed at extremely high current densities (1200 – 1700 A/cm²) under pulsed conditions. The post-stress analysis shows non-negligible increase of Rdson and Vf. Bipolar degradation occurring from stressing the body diodes at high forward current densities was confirmed by electroluminescence analysis.

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Periodical:

Materials Science Forum (Volume 1091)

Pages:

43-47

DOI:

https://doi.org/10.4028/p-52e297

Citation:

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Online since:

June 2023

Authors:

Sara Kochoska*, Martin Domeij, Thanh Toan Pham, Sotirios Maslougkas, Swapna Sunkari, Joshua Justice, Hrishikesh Das

Keywords:

4H-SiC, Basal Plane Dislocations (BPDs), Bipolar Degradation, Body Diode Stress, SiC MOSFETs

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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