Comparison of the Performance-Degrading Near-Interface Traps in Commercial SiC MOSFETs

Abstract:

This paper presents a comparison of the density of performance-degrading near-interface traps (NITs) in the most commonly available 1200 V commercial N-channel SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs). A recently developed integrated-charge technique was used to measure the density of NITs with energy levels aligned to the conduction band, which degrade MOSFET’s performance by capturing and releasing electrons from the channel biased in the strong-inversion condition. Trench MOSFETs of one manufacturer have lower densities of these NITs in comparison to MOSFETs with the planar gate structure, corresponding to observed higher channel-carrier mobility in trench MOSFETs. Different response-time distributions were also observed, corresponding to different spatial location of the measured NITs.

• Periodical: Materials Science Forum (Volume 1091)
• Pages: 25-29
• DOI: https://doi.org/10.4028/p-258768
• Online since: June 2023
• Authors: Mayank Chaturvedi*, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
• Keywords: Characterization Technique, Commercial 4H-SiC MOSFET, Device Performance, Near-Interface Traps

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