Preface
A Novel Non-Invasive Cryostatic Spectrometry Technique to Characterize the Carriers’ Multiplication Factor in Silicon Carbide Power Devices
p.3
p.3
Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO2-Interface Defects
p.15
p.15
Comparison of the Performance-Degrading Near-Interface Traps in Commercial SiC MOSFETs
p.25
p.25
SiC MOSFETs Biased C-V Curves: A Temperature Investigation
p.31
p.31
Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation
p.37
p.37
Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
p.43
p.43
Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO2/ SiN Gate Stack
p.49
p.49
Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD
p.55
p.55
Preface
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volume 1091)
Online since:
June 2023
Сopyright:
© 2023 Trans Tech Publications Ltd. All Rights Reserved
Share: