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Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation

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Abstract:

In this work, we investigate the Body Diode (BD) of a 40mOhm, 1.2kV SiC MOSFETs. We performed DC measurements and switching measurements, at Room Temperature (RT) and High Temperature (HT) (T=175°C), together with TCAD simulation and calibration. In switching measurements, we focused on the low side (LS) switch turn-on event, i.e., the BD turn-off event. We demonstrated that unipolar and bipolar BD can both be achieved with different VGS. With VGS=-5V, BD conducts in bipolar mode with carriers being injected via pn junction. This is rather well known in literature and is well characterized by the Negative Temperature Coefficient (NTC) of BD VF. Switching with BD VGS=-5V show strong reverse recovery-temperature dependent that caused by the augmented minority carrier injection at high temperature. Unipolar BD is achieved by channel conduction at VGS=0V and it is well characterized by BD VF - Positive Temperature Coefficient (PTC). Thanks to the unipolar nature, turn-on switching with BD VGS=0V show no reverse recovery-temperature dependent.

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Periodical:

Materials Science Forum (Volume 1091)

Pages:

37-41

DOI:

https://doi.org/10.4028/p-wzt7n0

Citation:

Cite this paper

Online since:

June 2023

Authors:

Thanh Toan Pham*, Jimmy Franchi, Martin Domeij

Keywords:

1.2kV SiC MOSFETs, Bipolar, Body Diode, Mixed-Mode Simulation, Switching, TCAD Simulation, Unipolar

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] P. Sochor, A. Huerner, M. Hell, and R. Elpelt, PCIM Europe, p.290–297, 2021.

Google Scholar

[2] M. Warnke, Y. M. Baghaie, in Power Electronics News, 3 March 2021.

Google Scholar

[3] S. Hino, H. Hatta, K. Sadadamatsu, Y. Nagahisa, S. Yamamoto, T. Iwamatsu, Y. Yamamoto, M. Imaizumi, S. Nakata, and S. Yamakawa, Material Science Forum, vol.897, p.477–482, (2017).

DOI: 10.4028/www.scientific.net/msf.897.477

Google Scholar

[4] W. Sung and B. J. Baliga, IEEE Trans. Ind. Electron., vol. 64, no. 10, p.8206–8212, Oct. 2017.

Google Scholar

[5] R. Callanan, J. Rice, and J. Palmour, Proc. 28th Annu. IEEE Appl. Power Electron. Conf., Mar. 2013, p.1250–1253.

Google Scholar

[6] R. Zhang, X. Lin, J. Liu, S. Mocevic, D. Dong, and Y. Zhang, IEEE Trans. Power Electron., vol. 36, no. 2, p.2033–2043, Feb. (2021)

Google Scholar

[7] onsemi datasheet, "Single 6 A High-Speed, Low-Side SiC MOSFET Driver NCP51705," on https://www.onsemi.com/products/power-management/gate-drivers/ncp51705

Google Scholar

[8] Information on https://www.synopsys.com

Google Scholar

[9] K. Lee et al., PCIM Europe 2017, pp.1-6, 2017.

Google Scholar

[10] M. Pulvirenti, A. G. Sciacca, L. Salvo, M. Nania, G. Scelba, and G. Scarcella, IEEE ECCE, 2020, p.2871–2877.

DOI: 10.1109/ecce44975.2020.9236330

Google Scholar

[11] Z.Wang, J.Ouyang, J.Zhang, X.Wu and K.Sheng, IEEE Energy Conversion Congress and Exposition, ECCE 2014, pp.2832-2837, Sep.(2014)

Google Scholar

[12] S. Linder, "Power Semiconductors," EPFL Press, 2007.

Google Scholar

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